以低壓化學氣相沉積成長六方氮化硼薄膜於矽基板其均勻性與時間可靠性之研究

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/88171

Title:	以低壓化學氣相沉積成長六方氮化硼薄膜於矽基板其均勻性與時間可靠性之研究
Authors:	韋人豪;Wei, Jen-Hao
Contributors:	光電科學與工程學系
Keywords:	六方氮化硼;低壓化學氣相沉積
Date:	2021-12-28
Issue Date:	2022-07-13 18:20:03 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究旨在利用低壓化學氣相沉積法以高溫石英爐管在矽基板上成長六方氮化硼薄膜，發現當沉積時有大量的雜質包含在六方氮化硼薄膜裡，會造成薄膜在大氣下容易剝落，所以我們改善了爐內腔體環境，並使六方氮化硼薄膜在大氣下更加穩定可靠。在高溫石英爐管內沉積的六方氮化硼薄膜，發現基板位置會嚴重影響薄膜均勻性，也必須要足夠的前驅物來反應，我們最終得到六方氮化硼的拉曼光譜圖半高寬在30~40 cm-1，拉曼特徵峰(E2g 振動模式)在1369~1372 cm-1。 ;Hexagonal boron nitride films were grown by using the high-temperature and low-pressure chemical vapor deposition on silicon substrates. When the hexagonal boron nitride films contain a lot of impurities during the deposition, the crack and spalling of the films will be in the atmosphere. We improved the furnace environment and hexagonal boron nitride films more stable and reliable. The uniformity of the hexagonal boron nitride film deposited in the high-temperature quartz furnace tube was dependent on the position of the substrates and the amount of precursors. Finally, the hexagonal boron nitride films have been achieved successfully with the Raman spectrum full-width at half-maximum of 30~40 cm-1 at the E2g mode of 1369~1372 cm-1.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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