數值模擬加熱系統對柴氏法生長氧化鎵晶體固液介面 的影響;Numerical simulation for the effect of heating system towards crystal-melt interface of β-Ga2O3 crystal during Czochralski Growth Process

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Title:	數值模擬加熱系統對柴氏法生長氧化鎵晶體固液介面的影響;Numerical simulation for the effect of heating system towards crystal-melt interface of β-Ga2O3 crystal during Czochralski Growth Process
Authors:	林詩翰;LIN-SHIH-HAN
Contributors:	能源工程研究所
Keywords:	氧化鎵單晶;柴式法;數值模擬;晶體-熔湯間固液介面;β-Ga2O3;CZ;numerical simulation;crystal-melt interface
Date:	2022-05-19
Issue Date:	2022-07-13 20:43:13 (UTC+8)
Publisher:	國立中央大學
Abstract:	氧化鎵（Ga2O3）是新型的氧化物半導體，氧化鎵寬能隙的材料性質，具備開發為高效率電子元件的潛能，再加上 β-Ga2O3可經由液相長晶法進行生長，與氣相長晶法相比，能夠大幅的提升長晶的速率以及晶體的品質。由於長晶過程中，晶體與熔湯間固液介面的形狀與位置影響著晶體成形的穩定度，而腔體的溫場與熔湯的流場則進一步影響著介面的位置與能量的平衡，因此在長晶的過程中溫場與流場的控制相當重要。本研究以數值方法進行模擬柴氏法 Czochralski（Cz）生長氧化鎵晶體過程中晶體-熔湯之固液介面形狀與位置，透過改變感應加熱線圈的間距、位置以及功率大小來模擬並分析熱場、流場，最後依據晶體-熔湯間固液介面上的熱通量差值進行介面幾何位置的調整直至收斂。從研究中發現腔體的溫場與流場會影響介面的能量平衡，在固定拉速的條件下，感應加熱線圈的功率、位置會影響介面的凹凸程度，根據文獻回顧，凸向熔湯的介面較容易生長出完整的晶棒，本研究結果中可以得知，熔湯的流場型態由浮力渦流所主導，等溫線受對流影響而變形，為了達成介面的能量平衡，隨著輸入功率提高，固液介面形狀朝向晶體方向變化，並且功率過高，介面形狀會由低功率的凸向熔湯變成凹向熔湯；提高線圈位置會造成固液介面軸向變化增加，並且線圈位置越高固液介面於熔湯中凸率增加；加大線圈間距使得熔湯溫度下降，固液介面於熔湯中凸率增加，並且線圈間距過大時，會造成熔湯溫度低於熔點溫度。;Gallium oxide (Ga2O3) is a new material of oxide semiconductor . For the wide Band-gap material property , Gallium oxide has the potential to develop as efficient electro components. Compare with growing from the gas phase, β-Ga2O3 crystals could be grown from liquid phase and also have higher growth rate as well as better quality. The temperature field of the cavity and the melt flow affect the crystal-melt interface shape and energy balance . And also the crystal-melt interface shape will affect the stability of crystal formation during crystal growth . Therefore the control of the crystal growth temperature field and melt convection is very important . This study analyzes the crystal-melt interface shape and position when the Ga2O3 crystal grows in Czochralski method through numerical simulation . In the simulation , we change coils spacing and position of induction heating coil and also the input power to see the difference in the result . Last, according to the heat flux difference , on the crystal-melt interface , to adjust the interface geometric position till convergence . The results show that the temperature field and flow field in the crystal growth furnace will affect the energy balance on the crystal-melt interface . Under the condition of fixed crystal pulling speed , the spacing and position of heating coils will cause different degrees of unevenness of the interface . Based on reference reviews , the interface convex to the melt is easier to grow complete crystals . Known from the simulation result , the flow field pattern in the melt is dominated by buoyant force, and the isotherm line is deformed by convection. In order to reach the energy balance on the crystal-melt interface, when the input power increases, the shape of the interface will change towards the crystal direction. IV In addition, when the power is too high, the interface shape will change from convex to concave . The second result is that the higher the coil position, the higher the convexity of the interface in the melt . Furthermore, increasing the position of the coil will increase the axial variation of the crystal-melt interface. Third result is the expansion of coil spacing , which will lower the temperature of the melt and cause the interface to increase the convexity in the melt . When the coil spacing is too large, the melt temperature will be lower than the melting point temperature.
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