在本研究中，我們提出了一種聚苯乙烯奈米球微影術結合鹼性溶液化學蝕刻與兩步驟金屬催化無電鍍蝕刻法之製程技術，成功地在(001)矽單晶基材上製備準直之一維矽單晶奈米線/錐狀雙尺度異質陣列結構，同時進一步製備雙面粗糙化表面，並保留原先蝕刻奈米線之底部銀金屬顆粒，由光學性質量測結果顯示其在可見光至近紅外光波段(400-1600 nm)，展現出良好的寬波段光吸收特性。隨後以新穎無電鍍沉積銀奈米粒子之技術開發銀/矽蕭基接面元件，並藉由TEM影像及其對應之選區電子繞射圖譜分析結構形貌及成份鑑定，最後使用940 nm近紅外光光源照射，於零偏壓下量測其光響應度、偵測靈敏度及響應速度，並掌握元件最佳性能之製程參數，直接整合於超薄可撓曲矽單晶基材上。 套用上述之製程技術，我們成功製備出超薄可撓曲銀/矽蕭基接面光感測元件，能夠在嚴酷的彎曲條件下進行光偵測，並承受多達1000次的反覆彎曲，展現出優異的穩定性及元件可靠度，同時對於940 nm之近紅外光光源，達到139 mA/W之光響應度及快速的響應時間(τ_r= 80 μs /τ_f= 412 μs)。本研究成功開發一連串簡單快速且低成本之濕式法，能夠應用於製備各式自驅動、高光響應及優異穩定性之可撓曲薄型光感測元件，是近幾年文獻中較少被提及的。 ;In this study, we proposed a approach based on the nanosphere lithography, alkaline solution chemical etching and two-step metal-catalyzed electroless etching to successfully fabricate vertically-aligned single crystalline silicon nanowires (SiNWs)/ Si pyramid nanostructure arrays on (001) silicon substrate. In addition to producing double-sided pyramid-textured surface, we remained the silver nanoparticles at the bottom of SiNWs after two-step etching processes. Through UV-Vis-NIR measurements can show that the double-sided structure exhibited high broadband absorption from visible to near-infrared (NIR) light range. Subsequently, we developed Ag / Si Schottky junction nanodevices by electroless deposition process and observed their morphologies by TEM and SAED analyses. The produced Ag / Si Schottky junction NIR photodetectors were able to operate at zero external bias voltage and exhibited high responsivity, sensitivity and rapid response time to 940 nm NIR light. By combining with ultra-thin Si substrate which possessed excellent bending ability, the flexible Ag / Si Schottky junction NIR photodetectors were prepared. They not only can be applied to achieve detection of NIR light on larger curvature surface but also can endure the bending cycles up to 1000 times. Besides, the flexible Ag / Si Schottky junction NIR photodetectors can exhibit a peak responsivity of 139 mA/W and fast response speed (τ_r= 80 μs /τ_f= 412 μs) to 940 nm NIR light. In this study, we proposed a series of facile and low-cost solution-based approachs to fabricate various self-powered, high responsivity, and excellent stability flexible Si-based optoelectronic nanodevices, which is less mentioned in the literature recently.
