低溫生長大面積二維二硫化鉬薄膜之研究;Study on growth large area two dimension MoS2 thin films at low temperature

NCU Institutional Repository > 理學院 > 光電科學研究所 > 博碩士論文 > Item 987654321/89333

請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/89333

題名:	低溫生長大面積二維二硫化鉬薄膜之研究;Study on growth large area two dimension MoS2 thin films at low temperature
作者:	黃柏智;Huang, Bo-Zhi
貢獻者:	光電科學與工程學系
關鍵詞:	二維材料;二硫化鉬;化學氣相沉積法;低溫生長;大面積;單層
日期:	2022-07-19
上傳時間:	2022-10-04 11:11:06 (UTC+8)
出版者:	國立中央大學
摘要:	隨著電晶體尺寸不斷縮小，遵循摩爾定律的難度越高，因此二維材料的研究逐漸興起，就是為了突破物理極限並取代矽等傳統半導體材料，因此本論文主要研究以低溫生長大面積二維二硫化鉬薄膜，成為下一世代半導體材料的選擇。本研究利用低壓化學氣相沉積法，於藍寶石基板上生長MoS2薄膜，並藉由助長劑的輔助，使生長溫度下降，量測拉曼位移之△k為21cm-1以下的單層結構，PL及吸收光譜量測得出MoS2為直接能隙的特性，AFM量測為0.75nm的單層厚度，HR-TEM量測層間距為0.65nm，MoS2薄膜轉印於SiO2/Si基板其XPS量測未含有助長劑之訊號，由於助長劑於生長時所產生的水溶性層，有助於轉印製程，但同時也影響MoS2薄膜於長時間的保存，藉由可靠性測試後，發現轉印後的MoS2薄膜受於水氣之影響大幅降低，可長達14天的存放，於電性量測中電流開關比約為107、次臨界擺幅約為95mV/decade及電子遷移率約為5cm2/Vs。該研究證明出以助長劑輔助生長的MoS2薄膜，可達到高品質、大面積、均勻性良好及單層結構的結果，且轉印於SiO2/Si基板上可以有效地保存，更廣泛的應用於電子及光電元件。 ;As the transistor size shrinking, it is more difficult to follow Moore’s Law. Therefore, the research on two-dimensional materials is gradually emerging to break the physical limit and replace traditional semiconductor materials such as silicon. In this paper, the large area two dimension molybdenum disulfide (MoS2) was grown at low temperature, become one for the choices of next generation semiconductor materials. The low-pressure chemical vapor deposition method (LPCVD) was applied to grow MoS2 thin films on sapphire substrates .The growth temperature is reduced by using the seeding promoters. The △k of the measured Raman shifting is below 21cm-1, which confirmed that the MoS2 was a monolayer. PL and absorption spectrum measurements confirmed that the MoS2 is a direct bandgap material. The monolayer thickness was 0.750nm measured by AFM, and the interlayer spacing was 0.650nm measured by HR-TEM. The MoS2 film was transferred to the SiO2/Si substrate, and the XPS measurement showed the results were without the signal of the seeding promoter. Due to the water-soluble layer produced by the seeding promoter the process growth, It is helpful for the transfer process, but also affects the long-term storage of the MoS2 films. After the reliability test, it is found that the life-time of the transferred MoS2 films is greatly improved, and the storage time can be preserved up to 14 days. In the electrical measurement of the MoS2 device, Ion/Ioff is about 107, the subthreshold swing is about 95 mV/decade and the mobility is about 5 cm2/Vs. Finally, the MoS2 films grown with seeding promoters can achieve high quality, large area, good uniformity and monolayer structure, and can be effectively preserved when transferred to SiO2/Si substrate for electronic and optoelectronic applications.
顯示於類別:	[光電科學研究所] 博碩士論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	34	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....