高功率脈衝磁控濺鍍氧化銦鎵鋅薄膜於軟性基板之研究;IGZO thin films on the flexible substrate by using high power impulse magnetron sputtering deposition

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題名:	高功率脈衝磁控濺鍍氧化銦鎵鋅薄膜於軟性基板之研究;IGZO thin films on the flexible substrate by using high power impulse magnetron sputtering deposition
作者:	尤叡婕;You, Ruei-Jie
貢獻者:	光電科學與工程學系
關鍵詞:	高功率脈衝磁控濺鍍;氧化銦鎵鋅;軟性基板;HiPIMS;IGZO;flexible substrate
日期:	2022-08-31
上傳時間:	2022-10-04 11:14:22 (UTC+8)
出版者:	國立中央大學
摘要:	近年來非晶氧化物半導體(amorphous oxide semiconductor, AOS)被應用於薄膜電晶體(thin film transistor, TFT)的通道層，與非晶矽a-Si、低溫多晶矽(Low Temperature Poly-silicon, LTPS)相比，AOS具有高遷移率、低漏電流、均勻性和適合低溫製程等優勢，其中AOS又以IGZO為值得關注的議題，其原為透明導電氧化物(transparent conductive oxide, TCO)配置的，因此擁有高穿透率與高導電性特性，更具有商業價值。本論文的實驗分成兩部分，分別探討IGZO薄膜製程和軟性基板之影響，並利用新穎的高功率脈衝磁控濺鍍來製程IGZO，能擁有高緻密性、附著力以及能於低溫製程下製程，對於未來用應於軟性基板有很大的奉獻。第一部分利用霍爾量測儀分析薄膜電性，施加負基板偏壓可提升電性，加入適量的氧氣流量提升遷移率；第二部分，濺鍍IGZO於軟性基板，利用彎曲測試，於不同直徑和張應力以及壓應力之電性比較，直徑越大對薄膜影響越小，且張應力對於薄膜影響並不大。最後，我們成功製作出IGZO於軟性基板，並透過彎曲測試，觀察薄膜對張應力與壓應力之比較，壓應力對薄膜影響更大。 ;In recent years, amorphous oxide semiconductor (AOS) has been applied to the channel layer of thin film transistor (TFT). Compared with amorphous silicon (a-Si) and low temperature poly silicon (LTPS), AOS has the advantages of high mobility, low leakage current, uniformity, suitability, and in low-temperature processes. Among them, IGZO is worthy of attention in AOS. In the beginning, IGZO has been applied for transparent conductive oxide (TCO) with high transmittance and high conductivity, which is a commercially valuable material. This research is divided into two parts, the influence of IGZO thin film process and the fabrication of IGZO on flexible substrates, respectively. A high power pulsed magnetron sputtering (HiPIMS) has been applied to fabricate IGZO and achieved high density, adhesion and under low temperature process on flexible substrates. We used HALL measurement to analyze the electrical properties of the films and found when the negative substrate bias was applied in the process, the electrical properties of the films can be improved and a few oxygen can also improve the mobility. Then, we used HiPIMS to fabricate IGZO on flexible substrates and bending tests, to measure tensile stress and compressive stress under different bending diameters. Comparing the electrical properties under different bending diameters, we can found the larger the diameter, the smaller the effect on the films. The tensile stress has only small influence for the films. Finally, it shows the IGZO has been fabricated on the flexible substrates successfully and the bending test shows the influence of the compressive stress is higher than tensile stress.
顯示於類別:	[光電科學研究所] 博碩士論文

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