3D快閃記憶體晶片測試和分析;3D NAND Flash Testing and Analysis

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/89867

Title:	3D快閃記憶體晶片測試和分析;3D NAND Flash Testing and Analysis
Authors:	蔣昀劭;Jiang, Yun-Shao
Contributors:	資訊工程學系
Keywords:	快閃記憶體;固態硬碟;錯誤型式;Flash Memory;SSD;Error Pattern
Date:	2022-08-03
Issue Date:	2022-10-04 12:02:56 (UTC+8)
Publisher:	國立中央大學
Abstract:	快閃記憶體已經被廣泛地用於計算機系統儲存設備雖然快閃記憶體廣泛採用錯誤校驗碼和讀取重試兩個方式來提升可靠性，但是在有些寫入資料的方式產生資料不穩定的情況，也就是當資料寫入快閃記憶體但是讀取的時候卻容易發生錯誤位元過多的情形，甚至因而產生致命錯誤，實驗中我們使用了兩個不同的快閃記憶體，透過實驗找到如何寫入資料來降低錯誤位元的數量來減少致命錯誤的發生情況，測試在什麼樣的寫入下資料會相對處於不穩定的狀態發現如果位於相同 WL的 Lower Page和 Upper Page皆有寫入資料並且沒有關閉下一條 WL將使資料不穩定而引發致命錯誤進一步測試是否經過了 3,000次的寫入和讀取後，特性是否依然存在或是產生其他的影響。;Flash memory has been widely used in computer system storage devices. Although flash memory widely uses two methods of error check code and read retry to improve reliability, in some ways of writing data, data is not in a stable situation, that is, when data is written to the flash memory but read, it is prone to excessive error bits, and even fatal errors. In the experiment, we used two different flash memories. Experiment to find out how to write data to reduce the number of error bits to reduce the occurrence of fatal errors, test under what kind of writing data will be in a relatively unstable state, and find that if the Lower Page and Upper Page located in the same WL are both Having written data and not closing the next WL will make the data unstable and cause a fatal error. Further test whether the feature still exists or has other effects after 3,000 writes and reads.
Appears in Collections:	[Graduate Institute of Computer Science and Information Engineering] Electronic Thesis & Dissertation

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