首要利用射極非晶矽的光能隙約為1.8 eV 及基極單晶矽的光能隙為1.12 eV會在射極及基極之間形成能帶不連續而製作非晶矽射極異質接面雙載子電晶體。欲使元件的操作速度提昇至GHz以上，基極的接面深度需越淺越好，但是此舉也會提高射極對基極的夾止電阻及基極本身的電阻，因而造成元件VBEon 電壓升高，增益值過高，集極與基極間易穿透及製程不易控制等缺點。本論文中把非晶矽射極及單晶矽基極高摻雜以提供足夠的QE、適當的QE/QB及10~60 kΩ的夾止電阻與基極本身的電阻，以獲得低製作成本的異質接面雙載子電晶體，並利用快速退火製程觀察非晶矽轉變成複晶矽時對元件特性的影響。 由於形成基極接面後的製程並無高溫製程，基極接面深度可控制在很淺的範圍，預期可以得到一低製作成本的高速元件。 本研究的另一主題是結合非晶質薄膜與有機聚合物發光材料研製有機發光二極體(PLED)。元件結構係以P-型非晶質矽膜(p-a-Si:H)取代傳統的聚合物電洞注入層，並以N-型非晶質鍺化矽碳膜(n-a-SiCGe:H)作為電子注入層。在N-型非晶質鍺化矽碳膜中含高成分鍺的PLED，其臨限電壓為14.3 V，而當電流密度為 300 mA/cm2時，發光亮度可達6450 cd/m2。 In a-Si:H emitter heterojunction bipolar transistors (HBT's), a heavily phosphorous-doped n-a-si:H was used as a wide-bandgap emitter material. Since the optical gap of a-Si:H is about 1.8 eV and the bandgap of c-Si is 1.12eV, respectively, so a band-gap discontinuity could be formed between emitter and base. In a HBT the shallower the base junction depth is, the higher the device operation speed, the base resistance, and hence the device VBE, and current gain are. A shallow base junction also decrease the VCE breakdown voltage due to punch-through. Therefore, in this study, the a-Si:H emitter layer and p-type c-Si:H base region were highly doped to obtain sufficient QE , suitable QE/QB, and base resistance which was around 10~60 kΩ. The transition from n-a-Si:H to n-type poly-silicon emitter would be performed by the later used of rapid thermal annealing. The employed base junction depth could be shallow since there was no high temperature process after base junction was formed by using ion implantation. A low-cost , high-speed HBT which was compatible with conventional BJT process was expected. Also, the EL (electroluminescence) characteristics of the polymer LEDs (PLEDs) having amorphous carrier injection layers had been investigated. The p-a-Si:H and n-a-SiCGe:H films were used as the hole and electron injection layers, respectively in these in these PLEDs to replace the conventional organic carrier injection layers. A peak brightness of 6450 cd/m2 at an injected cur
