English  |  正體中文  |  简体中文  |  Items with full text/Total items : 78852/78852 (100%)
Visitors : 36514556      Online Users : 428
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/92112

    Title: 十二英吋矽晶圓磊晶腔體五入口之數值模擬分析;Numerical Analysis of 12-inch Silicon Wafer Epitaxial Chamber with Five Entrance
    Authors: 韓承恩;Han, Cheng-En
    Contributors: 能源工程研究所
    Keywords: 化學氣相沉積;磊晶;CVD;epitaxy
    Date: 2023-07-25
    Issue Date: 2023-10-04 15:18:50 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 使用化學氣相沉積法進行磊晶,於晶圓表面形成薄膜已經是一個半導體行業中的重要製程,而磊晶的平坦度則是其中最為重要的挑戰,因為進行製程之反應腔體太大且複雜,因此需要藉由模擬分析其熱場、流場、濃度傳遞等來調整改善,使平坦度越來越好。
    ;Using chemical vapor deposition method for epitaxy, forming a thin film on the surface of the wafer is already an important process in the semiconductor industry, and the flatness of the epitaxy is the most important thing in the process. Because of the reaction chamber for the process is too large and complex, it is necessary to improve by simulating and analyzing its thermal field, flow field, concentration transfer, etc., to make the flatness better and better.
    In the experiment, due to the limitation of the thermal radiation system, no matter how to adjust the heat power ratio of the bulbs at each position, the surface of the wafer cannot have a uniform temperature. Therefore, the growth rate of the silicon film will be affected by the temperature, and the growth rate will be less uniform at some positions. So we changing the flow field of the non-uniform part to change the deposition rate more uniformity.
    In this study, the inlet flow rate is controlled by five regions, so as to control the inlet flow velocity distribution to control the change of the flow field, and then simulate and observe the change of the epitaxial film deposition rate and the concentration change in the chamber . Among them, due to the change of the flow rate, the requirements for the mesh will be extremely large. At the same time, because the wafer and the susceptor are in a rotating state in the chamber, flow field is influenced by rotation a lot. When entrance flow rate change, the influence range of each entrance would effect by rotation. The rotation effect should be the following study.
    Appears in Collections:[能源工程研究所 ] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明