P型氮化銦鎵歐姆接觸層對氮化鋁銦鎵藍紫光雷射二極體特性之影響; Influence of P-type InGaN Ohmic Contact Layer on GaN-based Blue-violet Laser Diode

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/9320

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Title:	P型氮化銦鎵歐姆接觸層對氮化鋁銦鎵藍紫光雷射二極體特性之影響;Influence of P-type InGaN Ohmic Contact Layer on GaN-based Blue-violet Laser Diode
Authors:	林明儀;Ming-Yi Lin
Contributors:	電機工程研究所
Keywords:	氮化鎵;氮化銦鎵;氮化鋁銦鎵;雷射二極體;歐姆接觸層;GaN;InGaN;AlInGaN;Laser Diode;Ohmic Contact Layer
Date:	2002-06-19
Issue Date:	2009-09-22 11:45:21 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本研究使用氮化鋁鎵銦系列材料製作藍紫光雷射二極體，論文內容著重在雷射二極體的製程改善及特性分析。其主要論述包含幾個主要部分; ( 1 ) 雷射二極體結構與製程：以標準黃光微影製程製作雷射二極體，再以機械研磨製程磨薄基板後崩裂以形成最後的元件。( 2 ) P型電極製作：以P型氮化銦鎵來增進P型歐姆接觸層的材料特性，並依製程所需來選擇適當的P型電極製作方式，使得P型電極呈現低阻抗的歐姆性接觸，以改善雷射二極體的特性。( 3 ) 雷射二極體特性分析：量測雷射二極體的電流電壓特性及電激發光譜來分析探討其製作上的困難性。 We utilized the p-type InxGa1-xN/GaN SLs as p-type ohmic contact layer in our laser diode structure. The tunneling barrier width of the metal-semiconductor contact is reduced because of its high hole concentration and low resistivity near the surface, thereby allowing for a high hole tunneling probability through the barrier. By comparison, the effects of the damage during RIE etching were reduced by using the p-type InxGa1-xN/GaN SLs layer as p-type ohmic contact. Then, the electrical characteristic of laser diode was improved.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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