物理氣相沉積（PVD）的鉭/氮化鉭（Ta/TaN）作為半導體製造中的銅互連部分中的擴散阻擋層和襯墊在起著至關重要的作用，特別是在130奈至5奈米及更高技術節點上。本論文專注於電弧噴塗積層製造（ASAM）塗層在PVD腔體襯套（chamber kit）翻新過程中的表面製備和特徵對於PVD Ta/TaN 製程中顆粒缺陷的影響。通過使用噴砂預處理基材，創造合適的表面紋理，以及將純鋁（99.8%）替換為鋁合金作為ASAM塗層材料，用以增強噴塗塗層的附著力。然而實驗結果顯示使用高附著力的塗層會增加kit壽命中期發生缺陷失控（OOC）的概率。這種現象的根本原因可能歸因於ASAM塗層的尖點狀表面形態。使用有限元分析模擬應力分佈並觀察多層Ta/TaN薄膜中的應力集中區域，並比較不同表面形態的兩種ASAM塗層。數值模擬和實驗觀察顯示，ASAM塗層表面形態顯著影響薄膜分層，這是顆粒缺陷的主要原因。本研究強調了理解形成顆粒缺陷的潛在機制的重要性，並強調了改善噴塗塗層的均勻性和增加表面曲率半徑以減少應力集中的重要性。;Physical Vapor Deposition(PVD) of Tantalum/Tantalum Nitride (Ta/TaN) barrier and liner plays a crucial role in the copper-interconnecting part of semiconductor manufacturing, and this will be used for the 130nm-5nm technology node and beyond. This study focuses on the surface preparation and characterization of arc spray-additive manufacturing (ASAM) coating in the refurbishment process of PVD chamber kits. Spray coating adhesion strength is enhanced due to the pre-treatment of the substrate with grit blasting, which creates a suitable surface texture, and the replacement of aluminum alloy as an ASAM coating material from pure aluminum (99.8%). However, it was experimentally found that using high adhesion strength coating chamber kits increases the probability of out-of-control (OOC) occurrences in the mid-stage of the kit lifetime, and the fundamental reasons may be attributed to the spiky surface morphology of ASAM coating layers. Finite element analysis simulates stress distribution and identifies stress concentration regions within the multilayer Ta/TaN thin film using two surface morphologies with significantly different curvature radii of spray coatings. Differences in ASAM processing parameters include a slower travel speed, a longer spray time, and a lower feed rate. It is numerically simulated and experimentally observed that spray coating surface morphology dramatically affects thin film delamination, which is the primary cause of particle defects. This study emphasizes the potential mechanisms for forming particle defects, improved uniformity in spray coatings, and increased surface curvature radius to minimize stress concentration.
