N型矽的電化學蝕刻普遍來說需施加外部輔助，達到電洞-電子對分離，生成電洞後才能有顯著的效果。近期也發展出在暗室中加入磁場、電場和PN接面……等，都能讓N-type矽成功製作出多孔矽。本研究先設計一新式垂直式蝕刻槽，以可拆卸式PN接面不加入金屬片輔助方式，在暗室的情況下施加電場進行研究。實驗結束後，能輕鬆拆除輔助的P-type矽，且電化學處理後N-type矽能保持潔淨且無汙染。實驗為使用不同摻雜濃度的N-type矽與不同摻雜濃度的P-type矽結合成PN接面進行電化學蝕刻，蝕刻完的試片再進行場發射掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、光致發光光譜儀(PL)分析。經由分析蝕刻後試片發現有光致發光的現象產生，在進行SEM、TEM分析後得出加上摻雜濃度達到一定量的P-type矽，實驗結果都會比單片N-type矽蝕刻來得更好，拍攝PL後估算出的奈米晶體尺寸也與TEM結果相吻合。;Electrochemical etching of N-type silicon generally requires external assistance to achieve hole-electron pair separation and generate significant effects. Recently, the addition of magnetic fields, electric fields, and PN junctions in a dark room has been developed, which allows successful fabrication of porous silicon from N-type silicon. In this study, a new vertical etching chamber was designed with a detachable PN junction, without the use of metal foil as an assistive method. The experiments were conducted in a dark room with the application of an electric field. After the experiments, the assistive P-type silicon could be easily removed, and the N-type silicon remained clean and uncontaminated after electrochemical treatment.The experiment involved combining N-type silicon with different doping concentrations and P-type silicon with different doping concentrations to form PN junctions for electrochemical etching. The etched samples were then analyzed using field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). Analysis of the etched samples revealed the occurrence of photoluminescence phenomena, and the results of SEM and TEM analyses showed that adding a certain amount of P-type silicon with appropriate doping concentrations yielded better results compared to etching single N-type silicon wafers. The estimated nanocrystalline grain size obtained from PL imaging also matched the results obtained from TEM analysis.
