以有機金屬蒸氣沉積法磊晶成長III族氮化物於新穎基板;Epitaxial Growth of Iii-Nitrides on Novel Substrates by Mocvd

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/94262

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Title:	以有機金屬蒸氣沉積法磊晶成長III族氮化物於新穎基板;Epitaxial Growth of Iii-Nitrides on Novel Substrates by Mocvd
Authors:	綦振瀛
Contributors:	國立中央大學電機工程學系
Keywords:	矽;碳化矽;鑽石;氮化鎵;磊晶;Si;SiC;Diamond;GaN;epitaxy
Date:	2024-09-27
Issue Date:	2024-09-30 17:22:21 (UTC+8)
Publisher:	國家科學及技術委員會(本會)
Abstract:	此計畫針對氮化鎵元件未來的應用與現有問題，研發更具競爭力之磊晶技術，可拓展氮化鎵元件發展之新機會，提升我國電力電子與通訊電子半導體產業之競爭力
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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