製備銀奈米粒子/多孔隙之字型矽晶奈米線/導電銅基材結構及其散熱性質之研究

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Title:	製備銀奈米粒子/多孔隙之字型矽晶奈米線/導電銅基材結構及其散熱性質之研究
Authors:	徐聖庭;Hsu, Sheng-Ting
Contributors:	化學工程與材料工程學系
Keywords:	之字型矽晶奈米線;金屬輔助蝕刻法轉附矽晶奈米線;微型散熱元件
Date:	2024-08-21
Issue Date:	2024-10-09 15:30:18 (UTC+8)
Publisher:	國立中央大學
Abstract:	本研究中將藉由兩步驟金屬輔助蝕刻製程藉由調控蝕刻液之組成成份以及改變製程之蝕刻時間在 p-type(111)晶面上之矽基材上製備大面積之字型矽單晶奈米線結構。接著利用加熱之銅柱來模擬電腦之發熱元件並利用銅柱兩端溫度差來計算矽奈米線微型散熱器之熱流變化來進行散熱性能測定。此外，為提升元件之散熱能力，進一步導入酸蝕刻製程技術，製備出多孔隙之字型矽奈米線結構，以提高矽奈米線散熱元件之比表面積，並在最佳製程條件之字型矽奈米線上運用無電鍍法沉積銀奈米粒子，來製備銀多孔隙之字型奈米線複合材料利用銀奈米粒子之高導熱性來進一步提升元件散熱性能。銀多孔隙之字型奈米線複合材料相較於一般常見之準直型矽晶奈米線結構相比其散熱效果有顯著提升。此外由於矽晶基材本身硬脆特性及其熱導率不如金屬等限制，使在矽晶基材表面製備完成之矽奈米線散熱元件之實際應用範圍受到限制，無法應用於彎曲表面上因此研究中將製備完成之字型奈米線結構放置於過氧化氫濃度較高之蝕刻溶液中藉由之字型奈米線底部殘留之銀奈米粒子催化側向蝕刻掏空矽晶奈米線底部結構並利用可撓曲導電銅膠帶將結構黏附至銅基材上同時不改變原始矽晶奈米線形貌。轉附至導電銅膠帶之字型矽晶奈米線結構因銅基材導熱性較佳之優勢使散熱元件之散熱效率有更近一步提升。最後將製備完成之矽奈米線散熱元件應用於熱電元件冷端表面藉由元件比表面積大及金屬矽複合材料等優勢提升熱電元件兩端溫度差以提升熱電元件輸出功率。;In this study, we employed a multi-step metal-assisted chemical etching method to prepare large-area, zigzag-shaped silicon nanowires on p-type (111) silicon substrates by adjusting the etching solution and varying the etching time. Subsequently, we used heated copper columns and calculated the thermal performance of the silicon nanowire based on the temperature difference across the copper columns. Furthermore, to enhance the heat dissipation capability of the devices, we introduced an acidic etching process to fabricate porous zigzag-shaped silicon nanowires. This increased the specific surface area of the silicon nanowire heat dissipation devices. Then we coated silver nanoparticles on these zigzag-shaped nanowires using electroless deposition, creating silver/porous zigzag-shaped nanowire composite materials. The high thermal conductivity of silver nanoparticles further improved the heat dissipation performance of the devices. Due to limitations such as lower thermal conductivity of silicon substrates, application of silicon nanowire heat dissipation devices on curved surfaces is restricted. Therefore, we immersed the zigzag-shaped nanowires in a high-concentration hydrogen peroxide etching solution. The remaining silver nanoparticles hollow out the bottom structure of the silicon nanowires. We then adhered these structures to a copper substrate using flexible conductive copper tape without altering the original morphology of the silicon nanowires. The superior thermal conductivity of the copper substrate further enhances the heat dissipation efficiency of the devices. Finally, we applied the fabricated silicon nanowire heat dissipation devices to the cold side surface of thermoelectric generators. Advantages such as a larger specific surface area and the metal-silicon composite material, we enhanced the temperature difference across the thermoelectric generators to increase their output power.
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] Electronic Thesis & Dissertation

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