H2電漿處理之超薄IGZO種子層的低電壓 鐵電電容器以實現30ns/3V讀寫速度且高儲存密度之每單元3位元FeNAND快閃記憶體;H2 Plasma Treatment in IGZO-Based FeCAP for Enhancing Storage Capacity, Switching Speed, and Endurance/Retention

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Title:	H2電漿處理之超薄IGZO種子層的低電壓鐵電電容器以實現30ns/3V讀寫速度且高儲存密度之每單元3位元FeNAND快閃記憶體;H2 Plasma Treatment in IGZO-Based FeCAP for Enhancing Storage Capacity, Switching Speed, and Endurance/Retention
Authors:	劉承瑞;Liu, Cheng-Rui
Contributors:	電機工程學系
Keywords:	鐵電記憶體;鐵電電容;銦鎵鋅氧化物;多位元儲存器;FeNAND;FeCAP;IGZO;MLC storage
Date:	2024-04-19
Issue Date:	2024-10-09 17:00:39 (UTC+8)
Publisher:	國立中央大學
Abstract:	在本研究中，我們使用In-Ga-Zn-O (IGZO)通道材料與超晶格HfO_2/ZrO_2（SL-HZO）結合，搭配3000W低熱預算的微波退火技術，製造了nearly wake-up free之金屬-鐵電-半導體-金屬（MFSM）電容器。為了消除在ALD生長過程中的碳汙染，我們使用H_2電漿實現了高品質的IGZO/HZO界面，並被X射線光電子能譜學(XPS)證實。經過遠程氫電漿處理提升了極化量Pr與矯頑場Ec，達到了2Pr: 40 μC/cm2 及 Ec: 2.33 MV/cm，使其實現了低功耗 30ns 的寫入速度與均勻的 8 state-per-cell 的儲存密度。高品質的介面確保了 10^8次循環的耐久性以及在超過90°C 溫度下穩定的10年數據保存能力。這種閘級堆疊結構為未來AI記憶計算提供了一條新的途徑。;In this study, we integrated IGZO channel with a superlattice of HfO_2/ZrO_2 (SL-HZO) under low-thermal-budget microwave annealing to produce a nearly wake-up free ferroelectric capacitors (FeCAP). To eliminate the impact of trap-charges during the atomic layer deposition (ALD) process, we conducted H_2 plasma treatment to eliminate leak defects induced by carbon contamination and maintain neutrality to achieve high-quality IGZO/HZO interfaces, confirmed by X-ray photoelectron spectroscopy (XPS). The H_2 plasma treatment improved polarization (Pr) and coercive field (Ec), reaching 2Pr: 40 μC/cm^2 and Ec: 2.33 MV/cm, enabling a low-power writing speed of 30ns with 8 states (3 bits per cell). The defect engineering method ensures endurance of up to 10^8 cycles and retains 10-year data storage at 90°C. This research provides a new avenue for improving emerging oxide interfaces controlled by ferroelectric polarization.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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