兼具高熱穩定性與高速讀寫潛力之新穎2D鐵電材料記憶體設計：基於鐵電六方氮化硼的堆疊工程探索;Novel 2d Ferroelectric Material Memory Design with High Thermal Stability and High-Speed Read/Write Capability: an Exploration of Stacking Engineering Based on Ferroelectric Hexagonal Boron Nitride

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/96939

Title:	兼具高熱穩定性與高速讀寫潛力之新穎2D鐵電材料記憶體設計：基於鐵電六方氮化硼的堆疊工程探索;Novel 2d Ferroelectric Material Memory Design with High Thermal Stability and High-Speed Read/Write Capability: an Exploration of Stacking Engineering Based on Ferroelectric Hexagonal Boron Nitride
Authors:	唐英瓚;綦振瀛
Contributors:	國立中央大學電機工程學系
Keywords:	六方氮化硼;鐵電;hexagonal boron nitride (h-BN);ferroelectricity
Date:	2025-07-31
Issue Date:	2025-08-07 17:20:28 (UTC+8)
Publisher:	國家科學及技術委員會(本會)
Abstract:	12345
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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