以生物鐵螯合劑表面改質矽奈米線場效電晶體感測器用於半導體製程化學品中的微量鐵離子檢測;Surface-Modified Silicon Nanowire FET Sensors with bio-Iron Chelator for Trace Ferric ion Detection in Chemicals used for Semiconductor Manufacturing

NCUIR > Engineering College > National Central University Department of Chemical & Materials Engineering > Electronic Thesis & Dissertation > Item 987654321/97365

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/97365

Title:	以生物鐵螯合劑表面改質矽奈米線場效電晶體感測器用於半導體製程化學品中的微量鐵離子檢測;Surface-Modified Silicon Nanowire FET Sensors with bio-Iron Chelator for Trace Ferric ion Detection in Chemicals used for Semiconductor Manufacturing
Authors:	黃子宸;Huang, Tzu-Chen
Contributors:	化學工程與材料工程學系
Keywords:	金屬離子檢測;鐵離子(III);去鐵胺;矽奈米線場效電晶體;Metal ion detection;Ferric ion;Silicon nanowire field-effect transistor;Deferoxamine
Date:	2025-07-12
Issue Date:	2025-10-17 11:11:58 (UTC+8)
Publisher:	國立中央大學
Abstract:	隨著積體電路尺寸的持續縮小，半導體製程中對使用之化學品的各種污染控制的需求也越來越高。除了透過管線與設備的鍍膜( coating )來防止金屬殘留與析出外，更由於部分化學品( 如：IPA、H2O2、THAH…等 )會直接接觸晶圓，其中可能含有的金屬汙染對元件良率有直接的影響，因此針對這些製程中所使用的化學品的金屬離子濃度的管控要求也越來越高。於化學品檢測方面，業界多數是使用感應耦合電漿質譜儀( Inductively Coupled Plasma Mass Spectrometry, ICP-MS )來進行定性及定量的分析，然而由於ICP-MS的高測量成本以及漫長的檢測時長使積體電路製造的成本難以下降，且檢測極限已逐漸無法滿足現今半導體製程所需，因此尋找成本低且檢測快速的替代方案成為半導體製造商和特用化學品供應商的關注目標。場效電晶體感測器( field-effect transistor sensor, FET sensor )具有高敏感、低成本以及快速檢測等特性，已被大量研究其應用於水溶液中金屬離子和組織樣品中生物分子等單分子/離子檢測技術的可能性。而本研究旨在開發一種對鐵離子( Ferric ion )具有專一性的矽奈米線場效電晶體( Silicon Nanowire Field-Effect Transistor, SiNW-FET )感測器。我們分別在針對半導體製程中常接觸的溶液，純水、異丙醇 ( isopropanol, IPA )作為樣品，研究其在同時含有23種金屬離子的干擾下的感測性能，並探討其應用於半導體產業的可能性。 ;With the continuous shrinkage of integrated circuit sizes, the demand for contamination control of chemicals used in semiconductor processes is increasing. In addition to the coating of pipes and equipment to prevent metal residue and precipitation, some chemicals (such as IPA, H2O2, THAH, etc.) directly contact the wafer. The metals that may be contained in these chemicals can directly impact component yield. Therefore, the control of metal ion concentrations in chemicals used during semiconductor processes is becoming more stringent. In terms of chemical detection, the industry commonly uses Inductively Coupled Plasma Mass Spectrometry (ICP-MS) for qualitative and quantitative analysis. However, due to the high measurement costs and long detection times of ICP-MS, reducing the cost of integrated circuit manufacturing has become difficult. Moreover, the detection limits of ICP-MS have gradually failed to meet the needs of current semiconductor processes. As a result, finding a low-cost, fast alternative to ICP-MS has become a key focus for semiconductor manufacturers and specialty chemical suppliers. The Field-Effect Transistor (FET) sensor is known for its high sensitivity, low cost, and rapid detection capabilities. It has been widely researched for its potential applications in the detection of metal ions in aqueous solutions and biomolecules in tissue samples. This study aims to develop a Silicon Nanowire Field-Effect Transistor (SiNW-FET) sensor that is specifically sensitive to ferric ions (Fe³⁺). We examined the sensing performance of the SiNW-FET sensor in solutions commonly encountered in semiconductor processes, such as pure water and isopropanol (IPA), and investigated its response to interference from 23 different metal ions. The study explores the potential applications of this sensor in the semiconductor industry.
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] Electronic Thesis & Dissertation

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