開發聚電解質分散劑應用於化學機械平坦化之氧化鈰研磨液;Development of Polyelectrolyte Dispersants for Ceria Abrasive in Chemical Mechanical Planarization.

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题名:	開發聚電解質分散劑應用於化學機械平坦化之氧化鈰研磨液;Development of Polyelectrolyte Dispersants for Ceria Abrasive in Chemical Mechanical Planarization.
作者:	林書羽;Lin, Shu-Yu
贡献者:	化學工程與材料工程學系
关键词:	聚電解質材料;氧化鈰研磨液;化學機械平坦化製程;Polyelectrolytes;Ceria slurry;Chemical mechanical planarization
日期:	2025-07-21
上传时间:	2025-10-17 11:20:25 (UTC+8)
出版者:	國立中央大學
摘要:	化學機械平坦化（Chemical Mechanical Planarization, CMP）是一種應用於半導體製程中的技術，透過機械力與化學反應來平坦化晶圓表面。氧化鈰（CeO2）奈米粒子因其與矽之間有強化學親和力，可有效去除氧化矽（SiO2）。然而，由於其高密度的特性（D=7.1 g/mL），使氧化鈰在水溶液中容易發生聚集，形成較大顆粒，進而導致缺陷與刮痕，並造成研磨效果難以控制。本研究旨在透過自由基聚合反應，開發由各種陽離子與陰離子單體組成的聚電解質，以穩定氧化鈰奈米粒子。表面修飾製程於超音波震盪機中進行，並透過 X 射線光電子能譜儀（XPS）與傅立葉轉換紅外線光譜儀（FTIR）來驗證其表面特性。添加聚電解質之氧化鈰溶液其水合半徑與界面電位則透過動態光散射儀（DLS）進行分析。實驗中探討了多項影響膠體穩定性的因素，包括聚電解質分散劑的化學結構、分子量、濃度、溶液的 pH 值，以及混合製程。結果顯示，無論是陰離子或陽離子型聚電解質分散劑，皆能透過靜電及立體排斥作用與體積排除效應（Excluded volume effect）顯著提升氧化鈰顆粒的膠體穩定性。然而，只有使用陽離子型聚電解質的氧化鈰研磨液，在最佳操作條件下能提升去除氧化矽的能力。因此，本研究所開發的新型陽離子聚電解質分散劑為氧化鈰的應用提供了新方向，並有助於功能性材料在半導體製程上的發展。未來我們將持續投入更多努力，深入探討聚電解質分散劑對膠體穩定性、去除速率與選擇性機制的基本原理。此外，為因應高市場價值的氧化鈰研磨液需求，尚需進一步針對其配方設計、高分子量產技術、矽晶圓表面粗糙度與殘留粒子等參數進行評估與優化。 ;Chemical mechanical planarization (CMP) is a technology in the semiconductor manufacturing process to flatten surfaces by mechanical forces and chemical reactions. CeO₂ (ceria) nanoparticles can effectively and selectively remove the SiO₂ layer. However, due to the high density (d = 7.1 g/mL), ceria nanoparticles in aqueous solutions tend to aggregate to form larger particles that will cause defects and scratches as well as uncontrollable abrasive effectiveness. This study is to explore CeO₂ stabilization using polyelectrolyte polymers developed from various cationic and anionic monomers using radical polymerization. Surface modification for the CeO2 was conducted in a sonication bath, and the surface properties were verified via X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectroscopy (FTIR). The colloidal size and stability of modified CeO2 nanoparticles were characterized using Dynamic light scattering (DLS). Experimental factors in terms of chemical structures, molecular weight, concentration of polyelectrolyte dispersants, pH of solution, and coating processes were carefully examined for optimal colloidal stability of CeO2 in aqueous solutions and removal rate for the SiO2 wafers. Results showed that both anionic and cationic polyelectrolytes provide improved colloidal stability to CeO2 through electrostatic repulsive interaction and large exclusive volume. However, only CeO2 with cationic polyelectrolyte dispersants reaches a high removal rate to SiO2 under an optimal operation condition. Accordingly, the newly developed polyelectrolyte dispersant for CeO2 offers a new avenue in the development of functional materials for semiconductor manufacturing. We will put more endeavors to exploring the fundamental mechanisms of the polyelectrolyte dispersants for high colloidal stability, removal rate, and selectivity. Moreover, to meet the high market values of the CeO2 slurry, several parameters should be further characterized, such as the formulation of the slurry, mass production of polymers, surface roughness, and residue particles on SiO2.
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