本研究致力於開發可重現性的六方氮化硼(hexagonal boron nitride, h-BN)薄膜製程，並探討其於介電層及異質接面基板中的應用潛力。透過低壓化學氣相沉積(LPCVD)系統，成功於Si(111)及SiO2/Si基板上沉積出sp2結構的氮化硼薄膜。實驗中比較了有無預加熱前驅物-硼烷氨(Ammonia Borane, AB)對薄膜品質的影響，結果顯示在100℃預熱三小時的條件下，可於兩種基板上獲得均勻、整齊排列的h-BN薄膜。其結構經拉曼光譜與穿透式電子顯微鏡(TEM)鑑定，並透過X射線光電子能譜儀(XPS)確認其B:N原子比接近1:1，證實成功製備出具高品質的h-BN薄膜。 在應用層面，本研究進一步探討h-BN作為絕緣介電層時的電氣特性，發現沉積時間為10分鐘的h-BN薄膜可兼顧厚度控制、結構均勻性與電性穩定性，為最適合作為介電層之參數。此外，亦將MoS2直接沉積於h-BN上，分析其結晶品質與光致發光行為，證實h-BN可作為優良的晶格緩衝層，顯著提升MoS2的結晶性與光響應。進一步以此結構製作光電元件，在紅光照射下出現明顯導通現象，顯示其具備光電導行為，具可見光偵測與光開關應用潛力。 本研究所建立之h-BN薄膜製程與異質整合技術，除了驗證其材料與應用潛力外，亦為未來二維材料整合與光電元件開發提供了重要參考依據。 ;This research focuses on the development of a reproducible fabrication process for hexagonal boron nitride (h-BN) thin films and the exploration of their potential applications as dielectric layers and substrates for heterojunction structures. Using a low-pressure chemical vapor deposition (LPCVD) system, sp2-bonded BN thin films were successfully deposited on Si(111) and SiO2/Si substrates. The effects of using preheated ammonia borane (AB) as a precursor were investigated and found that preheating AB at 100°C for three hours enabled the formation of uniform and well-aligned h-BN films on both substrates. The structure of the films was confirmed by Raman spectroscopy and transmission electron microscopy (TEM), while X-ray photoelectron spectroscopy (XPS) verified a near-stoichiometric B:N atomic ratio of 1:1, indicating the successful synthesis of high-quality h-BN films. For the application aspect, the dielectric properties of the h-BN films were further investigated. It was found that a 10-minute deposition produced h-BN films with optimal thickness, structural uniformity, and electrical stability, making it the most suitable parameter for dielectric layer formation. Moreover, MoS2 was directly deposited onto h-BN to evaluate the influence of the underlying layer. The results showed that the h-BN film effectively acted as a lattice buffer, significantly enhancing the crystallinity and photoluminescence of the MoS2 layer. A photodetector device based on this heterostructure exhibited clear conductivity under red laser illumination, indicating its photoconductive behavior and potential for visible light detection or optoelectronic switching applications. The h-BN film fabrication and heterostructure integration technology established in this study not only validates the functional potential on h-BN but also provides an important reference for future integration of two-dimensional materials and development of optoelectronic devices.
