大面積生長矽基二維材料二硫化鉬薄膜低溫製程之研究;Study on the Low-Temperature Growth of Large-Area Silicon-Based Molybdenum Disulfide Thin Films

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題名:	大面積生長矽基二維材料二硫化鉬薄膜低溫製程之研究;Study on the Low-Temperature Growth of Large-Area Silicon-Based Molybdenum Disulfide Thin Films
作者:	林煒程;Lin, Wei-Cheng
貢獻者:	光電科學與工程學系
關鍵詞:	二硫化鉬;二維材料;化學氣相沉積法;低溫;大面積;單層;均勻;電性特性
日期:	2025-08-04
上傳時間:	2025-10-17 11:51:24 (UTC+8)
出版者:	國立中央大學
摘要:	二硫化鉬（MoS₂）因具備直接能隙、高光電轉換效率與層數可調變結構，被視為極具潛力的二維半導體材料，廣泛應用於下一代光電元件與場效電晶體中。然而，傳統以固態前驅物，如MoO₃與硫粉進行低壓化學氣相沉積（LPCVD）製備MoS₂薄膜，常因升華與輸運行為不穩定，導致薄膜均勻性與層數控制困難。本研究提出一套以氣相前驅物MoCl₅與H₂S為來源之全氣相LPCVD製程，探討其對於MoS₂薄膜結晶品質、層數控制與薄膜均勻性之影響。實驗中系統性調控MoCl₅質量與H₂S流量，藉由拉曼光譜、光致發光（PL）光譜與X光光電子能譜（XPS）等分析，分析不同參數下之成膜特性。此外，透過拉曼區域掃描（Raman Mapping）與原子力顯微鏡（AFM）進行大面積分析，針對基板上不同位置的九個點（1~9cm）進行量測，以評估MoS₂薄膜於橫向方向的均勻性與表面平整度。結果顯示，本研究可於500 °C條件下成功成長出層數可控、結晶性佳且表面平整之單層MoS₂薄膜，其中PL FWHM最低可達84.76 meV，表現出優異的光學品質。Raman Mapping結果顯示，拉曼特徵峰位置與層數分布於量測範圍內一致性高，並未觀察到明顯的結構不連續或厚度變化，證實薄膜具有良好的均勻性。AFM 四點量測（2cm、4 cm、6cm與8cm位置）結果顯示表面粗糙度穩定落在0.25至0.26 nm間，進一步驗證其結構連續性與成膜穩定性。此外，利用Ti/Al(15/100 nm)電極製作之場效電晶體元件，展現最高On/Off ratio可達10⁵等級，電子遷移率約為5.07 cm²/V·s，代表本研究不僅具備可量產性，也具備應用於高效能二維電子元件之潛力。;Molybdenum disulfide (MoS₂), a two-dimensional semiconductor with a tunable direct bandgap and high photoelectric conversion efficiency, has emerged as a promising candidate for next-generation optoelectronic devices and field-effect transistors (FETs). However, conventional low-pressure chemical vapor deposition (LPCVD) processes using solid-state precursors such as MoO₃ and sulfur powder often suffer from inconsistent vaporization and transport dynamic, resulting in challenges in achieving large-area uniformity and precise layer control. In this study, a fully gas-phase LPCVD process based on MoCl₅ and H₂S precursors was developed to investigate its effects on the crystallinity, thickness control, and in-plane uniformity of MoS₂ thin films. By systematically adjusting the MoCl₅ mass and H₂S flow rate,the resulting films were characterized using Raman spectroscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS). In addition, large-area analysis was performed using Raman mapping and atomic force microscopy (AFM), with nine measurement points placed at 1 cm intervals (1~9cm) along the wafer to evaluate film uniformity and surface morphology. The optimized process enabled the growth of monolayer MoS₂ films with excellent crystallinity and flatness at a low temperature of 500 °C. The PL spectra exhibited a minimum full width at half maximum (FWHM) of 84.76 meV, indicating high optical quality. Raman mapping confirmed high consistency in peak positions and layer numbers across the substrate without visible discontinuities, validating the film’s excellent lateral uniformity. AFM results further supported this, with root-mean-square roughness values consistently measured between 0.25 and 0.26 nm. Furthermore, MoS₂ FETs fabricated with Ti/Al (15/100 nm) contacts demonstrated an on/off current ratio up to 10⁵, demonstrating the device’s switching capability and the fully gas-phase process’s potential for integration into large-area electronics.
顯示於類別:	[光電科學研究所] 博碩士論文

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