| 摘要: | 隨著半導體產業不斷朝更小的技術節點邁進，許多記憶體元件面臨了尺寸微縮的挑戰，例如DRAM和NAND Flash，DRAM目前已接近微縮極限、而NAND Flash則全力朝3D架構轉型；除此之外，此兩者在高速運算的進階應用上也遭遇到阻礙。目前已開發的次世代記憶體例如FRAM、PRAM、MRAM、及RRAM等，無論是在尺寸縮微、操作能耗、讀寫速度、運作次數等方面，皆有獨特的優勢和利基型的市場定位，且相對於FLASH有較快讀寫能力與耐久性，各個記憶體大廠積極投入研發，其中以RRAM的記憶胞面積較小，操作速度相比於FLASH更快，且因為其為非揮發式儲存具有低功率消耗與製程簡單，較具有發展性。
本計畫為了實現28-nm技術節點之後和HKMG元件的先進技術製程平台的 eNVM(embedded Non Volatile Memory) 解決方案以縮短「Moore′s gap」，採取與以往研究不一樣的思路，我們提出利用28-nm-HKMG gate stacks設計與製作雙極電阻式快閃記憶體(Bipolar RRAM FLASH)，利用CMOS製程的前端技術平台形成FLASH的HKMG電阻記憶體做為28-nm之後(包含16nm以降的鰭式電晶體技術平台)與HKMG平台的主要embedded NVM架構，而完成低成本且具備高整合強度與商業應用化價值的28-nm以後次世代的完整嵌入式HKMG eNVM解決方案。
;As the semiconductor industry persistently advances towards smaller technology nodes, numerous memory devices, such as Dynamic Random-Access Memory (DRAM) and NAND Flash, are confronted with significant challenges in dimensional scaling. DRAM is currently approaching its scaling limits, while NAND Flash is actively transitioning towards 3D architectures. Furthermore, both technologies encounter obstacles in advanced high-speed computing applications. Next-generation memories (NGMs) currently under development, including Ferroelectric RAM (FRAM), Phase-Change RAM (PRAM), Magnetoresistive RAM (MRAM), and Resistive RAM (RRAM), exhibit unique advantages and niche market positioning with respect to dimensional scalability, operational energy consumption, read/write speeds, and endurance. Among these, RRAM is particularly distinguished by its smaller memory cell area and faster operational speeds compared to Flash memory. Moreover, its non-volatile storage nature, coupled with low power consumption and a simpler fabrication process, renders RRAM the most promising candidate for future development.
This project aims to realize an embedded Non-Volatile Memory (eNVM) solution for advanced technology process platforms beyond the 28-nm technology node and incorporating High-K Metal Gate (HKMG) components, thereby addressing the "Moore′s gap." Adopting a novel approach distinct from previous research, we propose the design and fabrication of Bipolar Resistive RAM Flash (Bipolar RRAM Flash) utilizing 28-nm HKMG gate stacks. This methodology involves leveraging the front-end-of-line (FEOL) CMOS process technology platform to form HKMG resistive memory elements, intended to serve as the primary embedded NVM architecture for post-28-nm nodes (including 16nm and subsequent FinFET technology platforms) and HKMG platforms. The ultimate objective is to deliver a complete, cost-effective, next-generation embedded HKMG eNVM solution for technologies beyond 28-nm, characterized by high integration density and significant commercialization value. |
