氧化鋅、氧化鎵、鉍銅硒氧之P型摻雜製程研究;Investigation of P-type Doping Processes on ZnO, Ga2O3, and BiCuSeO

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题名:	氧化鋅、氧化鎵、鉍銅硒氧之P型摻雜製程研究;Investigation of P-type Doping Processes on ZnO, Ga2O3, and BiCuSeO
作者:	陳致中;Chen, Chih-Chung
贡献者:	電機工程學系
关键词:	氧化鋅;氧化鎵;鉍銅硒氧;P型摻雜;熱電材料;ZnO;Ga2O3;BiCuSeO;P-type;Thermoelectric materials
日期:	2025-07-28
上传时间:	2025-10-17 12:46:47 (UTC+8)
出版者:	國立中央大學
摘要:	當代社會在能源與環境議題上面臨前所未有的挑戰，而材料科學正是驅動綠色能源技術發展的核心關鍵。隨著功能性材料的進步，人們逐漸將目光轉向具有能量轉換與再利用潛力的特殊材料上，其中「氧化物半導體材料」因其豐富的來源、良好的熱穩定性以及化學穩定性，成為高溫能源應用中的重要候選。而半導體材料本身可透過摻雜行為，使其具有調控載子濃度與能帶結構的特性，當其應用於熱電轉換時，更可發展為將熱能直接轉換為電能的熱電材料。熱電材料的應用不僅能有效回收工業與環境中的廢熱，更為實現高效率的能源循環系統提供可行的解決方案。受到如此的啟發，本研究將以半導體材料為起點，並選擇三種可行的氧化物半導體，分別為氧化鋅(ZnO)、氧化鎵(Ga₂O₃)與鉍銅硒氧(BiCuSeO)材料進行研究。透過元素摻雜製備出p型半導體，接著對其進行電性研究與逐步改善熱電特性，並透過結構與成分分析深入理解其材料行為，最後進行熱電性能比較，以評估其作為高溫熱電材料的應用潛力。 ;Modern society faces unprecedented challenges in energy and environmental sustainability, and materials science has emerged as a pivotal force driving the development of green energy technologies. With advances in functional materials, increasing attention has been directed toward materials capable of energy conversion and reuse. Among them, oxide semiconductor materials have become promising candidates for high-temperature energy applications due to their natural abundance, excellent thermal stability, and chemical robustness. Semiconductor materials inherently allow for the modulation of carrier concentration and band structure via doping, and when applied to thermoelectric conversion, they can be engineered into thermoelectric materials capable of directly converting heat into electricity. The application of thermoelectric materials not only enables the effective recovery of waste heat from industrial and environmental sources but also offers a feasible pathway toward establishing efficient energy recycling systems. Inspired by this potential, the present study focuses on semiconductor-based oxide materials, specifically selecting three candidates: zinc oxide (ZnO), gallium oxide (Ga₂O₃), and bismuth copper selenide oxide (BiCuSeO). In this study, P-type semiconductors were synthesized via appropriate elemental doping, followed by electrical property investigations and the optimization of their thermoelectric performance. Structural and compositional analyses were also conducted to gain deeper insight into the material behavior. Ultimately, their thermoelectric properties were compared to evaluate their potential for high-temperature thermoelectric applications.
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