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| 題名: | P型鎂矽錫之接觸金屬測試及模組製作;Study of Mental Contacts for P-type Mg2(SiSn) and Thermoelectric Modules |
| 作者: | 簡廷翰;Chien, Ting-Han |
| 貢獻者: | 電機工程學系 |
| 關鍵詞: | 熱電元件;Mg2(Si,Sn);p-type;模組製作 |
| 日期: | 2025-07-29 |
| 上傳時間: | 2025-10-17 12:47:31 (UTC+8) |
| 出版者: | 國立中央大學 |
| 摘要: | 近幾年，全球暖化的問題越來越嚴重是由於溫室氣體排放不斷增加，各國研究人員正不斷尋求新的替代能源和再生能源的方法。當中，只需收集廢熱來製造溫差產生電的熱電材料技術因其有很好的前景而受到關注。此方法可用於汽車、航空、穿戴式裝置等領域。
不同的熱電材料有各種不同的特性，儘管至今熱電的轉換效率仍須提高，但利用廢熱發電仍然有非常大的發展潛力，研究員在此領域不斷的尋找更效率更好的熱電材料，並且合成不同材料和改變結構上的設計來提高其轉換效率。這將減少能源上的浪費。
本篇論文以P型Mg2SnAg0.02+25 at% Mg+4% Mg2Si熱電材料作為研究題目，找出適合的接觸金屬與solder與N型Mg2(SiSn)材料組成元件的可行性，並對其接合強度及輸出特性進行分析與量測。
實驗結果顯示，最具效能的串接方式為金屬擴散接合搭配冷壓焊料堆疊方式。於P試片表面依序疊加30 μm之Al、Ag、Sn金屬箔片作為接觸金屬，再於試片上下兩端各堆疊80 μm Ni作為電極金屬；而N試片則堆疊30 μm之Al與Ag金屬作為接觸層，並採用30 μm Co金屬作為電極。完成堆疊後，將試片進行600 °C、1小時的退火處理，以促進金屬與試片間之擴散接合。
退火完成並完成電性量測後，選定表現穩定之P型試片，其金屬表面再依序疊加30 μm Sn/Ag漿/30 μm Sn作為焊料結構，並將N型試片電極延伸出的金屬與P型試片之金屬層進行焊接，形成單對PN熱電元件。完成接合後，針對此單對元件進行輸出特性量測與接合品質評估。最終，將多組經焊接完成且特性穩定之PN元件，依據相同方法組裝成大型熱電模組。完成模組後，進一步針對其熱電輸出特性與接合強度進行量測與分析。
;In recent years, the problem of global warming has become increasingly severe due to the continuous rise in greenhouse gas emissions. Researchers worldwide are actively exploring alternative and renewable energy solutions. Among these, thermoelectric materials, which can generate electricity from waste heat through temperature gradients, have attracted significant attention due to their promising potential. This technology can be applied in various fields such as automobiles, aerospace, and wearable devices.
Different thermoelectric materials exhibit distinct properties. Although the energy conversion efficiency of thermoelectric systems still requires improvement, the ability to harvest electricity from waste heat presents considerable potential for development. Researchers continue to seek high-performance thermoelectric materials by synthesizing new compounds and modifying structural designs to enhance conversion efficiency, thereby reducing energy loss.
This study focuses on P-type Mg₂SnAg₀.₀₂ with 25 at% excess Mg and 4% Mg₂Si as the thermoelectric material. The research investigates suitable contact metals and solder materials for integrating with N-type Mg₂(Si,Sn), evaluating the feasibility of forming thermoelectric couples, and analyzing the bonding strength and electrical output characteristics.
Experimental results indicate that the most effective joining method is metal diffusion bonding combined with cold-pressed solder stacking. For the P-type sample, 30 μm thick Al, Ag, and Sn foils were sequentially stacked as contact metals, with 80 μm thick Ni layers added to both ends as electrode metals. For the N-type sample, 30 μm thick Al and Ag were used as contact layers, with 30 μm thick Co as the electrode metal. The samples were then annealed at 600 °C for 1 hour to enhance interfacial bonding via metal diffusion.
After annealing and electrical measurements, P-type samples exhibiting stable performance were selected. A solder structure composed of 30 μm Sn/Ag paste/30 μm Sn was applied to the metal surface, and the extended electrode of the N-type sample was soldered to the metal layer of the P-type sample to form a single PN thermos-electric couple. Electrical output characteristics and bonding quality of the single couple were evaluated. Finally, multiple PN couples with stable performance were assembled using the same method into a large thermoelectric module. The module′s output characteristics and bonding strength were further measured and analyzed. |
| 顯示於類別: | [電機工程研究所] 博碩士論文
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