利用雷射調控全無機鈣鈦礦薄膜發光與移除 特性之研究;Laser-Modulated Luminescence and Removal Characteristics of All-Inorganic Perovskite Thin Films

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题名:	利用雷射調控全無機鈣鈦礦薄膜發光與移除特性之研究;Laser-Modulated Luminescence and Removal Characteristics of All-Inorganic Perovskite Thin Films
作者:	張舒評;Chang, Shu-Ping
贡献者:	機械工程學系
关键词:	鈣鈦礦;perovskite
日期:	2025-06-09
上传时间:	2025-10-17 12:57:03 (UTC+8)
出版者:	國立中央大學
摘要:	熱蒸鍍法可在較低溫度下製備出高品質的鈣鈦礦薄膜，提升薄膜的均勻性與重現性，這些因素對於提升光電元件的穩定性與性能至關重要。然而，CsPbX₃ 鈣鈦礦量子點對濕氣與氧氣高度敏感，在高濕與氧氣環境中容易迅速劣化，限制了其長期穩定性。本研究引入雷射退火（laser annealing）技術，作為一種有效解決此問題的方法。透過精確控制熱輸入並實現局部加熱，雷射退火能有效減少薄膜內部的應力，進而提升其結晶品質與環境穩定性。實驗結果顯示，雷射退火可大幅提升 CsPbX₃ 鈣鈦礦薄膜在潮濕與富氧環境中的穩定性，同時保持其優異的光電特性。根據實驗，找尋到最適合雷射退火的薄膜厚度為600nm，並進行不同的雷射能量、停留時間以及次數，發現30%, 10ms, 5times可以使薄膜發光最亮，PLQY量測為5.32%，鈣鈦礦薄膜表現出最佳的光致發光效果。XRD 與 SEM 結果證實此條件可有效促進晶粒成長、降低晶界密度，進而提升結晶品質與光學表現，並觀察到 Cs₄PbBr₆ 相關的二維發光特性。然而，當雷射能量或照射次數過高時，則會造成局部結構破壞與材料移除現象，導致螢光表現下降。針對此現象，本研究進一步採取增加雷射能量使材料移除的概念，先放置高溫爐退火使PLQY到達50%，並能完整移除鈣鈦礦薄膜的最小雷射參數為30%, 100ms, 3times，透過調整雷射能量輸入，使高能量區域的材料受到更強烈的熱效應，進一步蒸發或移除，而低能量區域則可保留原始的結構。本研究證明雷射退火在提升鈣鈦礦薄膜製程與穩定性方面具有重大潛力。此技術可望廣泛應用於太陽能電池、LED 及光電感測器中，並在小面積製程中提升製程精度與薄膜均勻性。此外，雷射退火在顯示技術、防偽標籤與資訊加密等領域也展現出極高的應用價值與未來發展前景。 ;High-quality perovskite thin films can be fabricated at relatively low temperatures using thermal evaporation, which improves film uniformity and reproducibility—key factors for enhancing the performance and stability of optoelectronic devices. However, CsPbX₃ perovskite quantum dots are highly sensitive to moisture and oxygen, resulting in rapid degradation under ambient conditions and limiting long-term stability. To address this, laser annealing was introduced as a post-treatment technique. By precisely controlling localized thermal input, laser annealing effectively reduces internal stress, enhances crystallinity, and improves environmental stability while maintaining excellent optoelectronic properties. Experimental results identified 600 nm as the optimal film thickness for laser annealing. Among various tested conditions, the setting of 30% power, 10 ms pulse duration, and 5 cycles produced the strongest photoluminescence, achieving a PLQY of 5.32%. XRD and SEM analyses confirmed grain growth, reduced grain boundaries, and the emergence of 2D emission features from Cs₄PbBr₆. However, excessive laser energy or irradiation caused localized structural damage and material ablation, reducing luminescence. To further explore this phenomenon, a high-temperature furnace pre-annealing step was performed to increase the PLQY to 50%. The minimum laser condition required to fully remove the film was found to be 30% power, 100 ms, 3 times. This enabled selective evaporation in high-energy regions while preserving the structure in lower-energy areas. This study demonstrates that laser annealing holds significant potential for enhancing the processing and stability of perovskite films. The technique is promising for applications in solar cells, LEDs, and photodetectors, and offers high precision for small-area fabrication, with further potential in display technology, anti-counterfeiting, and data encryption.
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