半導體線寬的進一步減小，對矽晶圓上矽外延層的厚度均勻性提出了更高的要求。本研究旨在利用數值模擬研究側噴射器和多入口板配置在常壓化學氣相沉積反應器中的應用，以提高厚度均勻性。側噴射器的結果表明，當側噴射器速度足以引導來自側噴射器的流線接觸晶圓邊緣時，可以修改晶圓邊緣附近的沉積速率(GR)。可以透過增加側噴射器的氣體速度和TCS三氯矽烷質量分數來增加側噴射器處的氣體動量。增加的 TCS 質量分數進一步增強了晶圓邊緣區域的 GR。在沒有側注入器的情況下觀察到的由於晶圓邊緣的 GR 突然下降而導致的不均勻性可以透過側注入器和操作參數優化的組合來顯著增強。結果表明TCS反應邊界層從晶片的前緣到後緣的快速成長導致前緣附近的GR快速減少。此外，基座的旋轉由於黏滯力而引起 GR 的傾斜。這些因素導致晶圓上的 GR 不均勻。這些挑戰可以透過利用多入口反應器設計來解決，該設計具有精確定位的入口板和每個入口的最佳氣體速度。在垂直於氣流方向的相同位置保持相同的 GR 可提高厚度均勻性。此外，在適當的入口通道處使用較高的氣體速度可以減少來自晶圓前緣的 GR 的非線性，從而提高厚度均勻性。此外，透過採用傾斜的天花板，可以提高氣體在流向方向上的速度。在入口處天花板傾斜角度與氣體速度的最佳組合，也能改善矽外延層的均勻性。在本研究中，當使用多進氣口反應器、優化頂部形狀以及進氣速度時，矽外延層的厚度不均勻性從 55% 改善至 3%。;The further decrease in semiconductor nanometer line width demands higher evenness of the silicon epitaxial layer on the silicon wafer. This study uses two approaches to improve the evenness of the silicon epitaxial layer on the silicon wafer. The first approach improves the silicon epitaxial layer evenness in the wafer edge zone by using a side injector, while the second approach uses a multi-inlet plate configuration to improve the silicon epitaxial layer evenness in the wafer center zone. Both simulation results and experimental data of the side injector indicate that the growth rate (GR) of the silicon epitaxial layer near the wafer edge can be modified when the side injector momentum is sufficient to direct streamlines from the side injector to contact the wafer edge. The momentum of the gas at the side injector can be increased by increasing the gas flow speed and the trichlorosilane (TCS) mass fraction of the side injector. The momentum of the side injector governs the affected zone, while the TCS mass fraction of the side injector impacts the GR within the affected zone. An increased TCS mass fraction further enhances the GR at the wafer edge zone. Therefore, the unevenness of the silicon epitaxial layer due to a sudden drop in the GR at the wafer edge observed in the absence of a side injector can be markedly improved by the combination of a side injector and the optimization of operating parameters. The results of simulation agreed well with the experimental data in the side injector study. In the multi-inlet study, the present simulation results demonstrate that the rapid growth of the TCS reaction boundary layer from the front edge to the rear edge of the wafer results in a rapid reduction in GR near the front edge. Furthermore, the rotation of the susceptor induces a tilt in the GR due to viscous forces. Rapid reduction in GR near the front edge and a tilt in the GR result in unevenness of the silicon epitaxial layer on the silicon wafer. These challenges can be resolved by utilizing a multi-inlet system design with precisely positioned inlet plates and optimum gas flow speeds for each inlet channel. Maintaining the same GRs at the same locations perpendicular to the streamwise direction can improve the silicon epitaxial layer evenness. In addition, using higher gas flow speed at appropriate inlet channels reduces nonlinearity in GR from the wafer front edge, therefore improving the silicon epitaxial layer evenness. Furthermore, increasing the gas flow speed in the streamwise direction can be achieved by employing a tilted ceiling. An optimal combination of ceiling tilt and gas flow speed at the inlet can also improve the evenness of the silicon epitaxial layer. In this study, the unevenness of the silicon epitaxial layer improved from 55% to 3% when the multi-inlet plate system, optimizing ceiling shape and gas flow speed at inlet are used.
