玻璃作為新世代電子封裝材料，因其高機械強度、優異的熱穩定性與電絕緣特性，在IC中介層（Interposer）與高頻電路板領域展現巨大的應用潛力。然而，玻璃硬脆材料的特性及其結構穩定性，其微結構製備與通孔內壁金屬化仍面臨技術挑戰。 本研究採用雷射誘導背向濕蝕刻（Laser-Induced Backside Wet Etching, LIBWE）技術，結合無電鍍銅沉積製程應用於Corning鋁矽酸鹽玻璃上製備金屬化圖形結構與微米通孔。此技術透過將雷射光束聚焦於玻璃與吸收液硫酸銅（CuSO₄）的界面，藉由吸收液的選擇性光熱轉換效應實現材料移除。同時，在雷射作用下使奈米銅顆粒沉積於玻璃表層形成銅種子層，為後續無電鍍金屬化附著提供關鍵基礎。 檢測方面，本研究以掃描式電子顯微鏡（SEM）與穿透式電子顯微鏡（TEM）觀察加工後玻璃與銅粒子在玻璃表層內部的特徵結構；結合能量散射光譜（EDS）與 X光繞射儀（XRD）分析確認銅種子層顯示不僅可均勻分布於玻璃表面，更已有效滲透至玻璃表層內部，形成具良好鍵結力的金屬種子層。 本研究成功開發出兼具低電阻率與高附著強度的玻璃金屬化製程，所得玻璃通孔孔壁近乎垂直，孔壁表面粗糙度Ra < 400 nm，符合高頻元件訊號傳輸需求。研究結果顯示，LIBWE技術能有效整合玻璃微孔加工與金屬種子層佈植，展現製程可行性與應用潛力。 ;Glass has emerged as a promising material for next-generation electronic packaging due to its high mechanical strength, excellent thermal stability, and supe-rior electrical insulation. It holds significant potential in applications such as IC in-terposers and high-frequency circuit boards. However, the inherent brittleness and structural rigidity of glass present major challenges in fabricating microstructures and achieving reliable metallization on via sidewalls. In this study, the Laser-Induced Backside Wet Etching (LIBWE) technique was employed in combination with electroless copper plating to fabricate metallized patterns and micro-scale through-holes on Corning aluminosilicate glass. By focus-ing laser beams at the interface between the glass and a copper sulfate (CuSO₄) ab-sorbing solution, selective photothermal conversion of the absorbing liquid enabled precise material removal. Simultaneously, the laser-induced reaction facilitated the deposition of copper particles along the grooves and via sidewalls, forming a copper seed layer critical for subsequent chemical plating. For characterization, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were used to examine the interfacial microstructures between the glass and copper. In addition, Energy-Dispersive Spectroscopy (EDS) and X-Ray Diffraction (XRD) confirmed that the deposited copper layer not only formed uniformly across the glass surface but also effectively penetrated the sub-surface region, establishing a well-bonded seed layer. The developed process achieved a metallization scheme featuring low resistiv-ity and strong adhesion. The fabricated glass vias exhibited near-vertical sidewalls and a surface roughness (Ra) of less than 400 nm, meeting the transmission re-quirements of high-frequency components. These results demonstrate the potential of LIBWE as an integrated solution for glass micro-structuring and metallization.
