本研究探討六方氮化硼(h-BN)作為深紫外光發光二極體(DUV-LED)電子阻擋層(EBL)之應用潛力，並與傳統氮化鋁鎵(AlGaN)進行比較。透過 COMSOL 半導體模組進行一維模擬，分析其對能帶結構、電流-電壓特性曲線(I-V Curve)及內部量子效率(IQE)之影響。研究結果顯示，六方氮化硼可提供更高導帶能障，顯著抑制電子洩漏。因此，相較於傳統氮化鋁鎵電子阻擋層，六方氮化硼電子阻擋層具提升電流導通能力，可改善內部量子效率衰退現象。;This study investigates the potential of hexagonal boron nitride (h-BN) as an electron blocking layer (EBL) in deep ultraviolet light-emitting diodes (DUV-LEDs), in comparison with a conventional EBL made of aluminum gallium nitride (AlGaN). One-dimensional simulations were conducted using COMSOL Multiphysics to analyze the effects on the energy band diagram, current-voltage (I-V) characteristics, and internal quantum efficiency (IQE). The simulation results indicate that incorporating the h-BN as an EBL provides a higher electron potential barrier, effectively suppressing electron leakage. Therefore, compared with the conventional AlGaN EBL, the h-BN BEL may enhance current conduction and help mitigate the IQE droop.
