車用碳化矽功率模組銅燒結固晶製程對熱阻及接合強度影響;Effect of Copper Sintering Die Attach Process on Thermal Resistance and Bonding Strength of Automotive Silicon Carbide Power Modules

NCUIR > Engineering College > Executive Master of Mechanical Engineering > Electronic Thesis & Dissertation > Item 987654321/99461

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Title:	車用碳化矽功率模組銅燒結固晶製程對熱阻及接合強度影響;Effect of Copper Sintering Die Attach Process on Thermal Resistance and Bonding Strength of Automotive Silicon Carbide Power Modules
Authors:	蔡長晉;Tsai, Chang-Chin
Contributors:	機械工程學系在職專班
Keywords:	車用功率模組;碳化矽;銅燒結;熱阻;推力;Automotive power modules;silicon carbide;copper sintering;thermal resistance;shear strength
Date:	2025-11-21
Issue Date:	2026-03-06 19:03:16 (UTC+8)
Publisher:	國立中央大學
Abstract:	高導熱固晶的材料與製程設計，是影響車用碳化矽功率模組熱管理及可靠性的關鍵。燒結固晶在溫度餘裕、熱膨脹係數及功率密度均較錫焊料更適合碳化矽功率模組。而平價電動車的市場趨勢，驅使著銅燒結加速製程開發及良率的提升。本研究基於前人的銅燒結三角補償理論，將既有車用牽引逆變器功率模組的銀燒結材料變更為銅燒結，並考量產能優化將燒結時間控制在180秒。因此本研究在氮化矽陶瓷基板上對碳化矽晶片進行銅燒結固晶，根據文獻以進行參數設定實驗，進而分析溫度及壓力對燒結層空洞率、熱阻(Thermal Resistance, Rth)、推力測試等性能的影響，藉此建立通用且標準化的熱管理基礎。實驗結果顯示 X-ray 或超音波掃描難以識別燒結銅燒結邊界，無法量化 void rate。溫度 260°時，15 或 20 MPa 都取得相近的Rth與推力。而維持壓力15MPa，溫度由260°C 提高到275°C 時，Rth由0.4925(°C/W) 降低到0.2860(°C/W)，推力從4.1 ± 2.73 MPa 提升為25.94 ± 4.84 MPa。銀燒結在180秒燒結時間下測得Rth 0.2485 (℃/W)，推力41.24 ± 4.28 MPa。銅燒結具備製程可行性且不須陶瓷基板鍍銀，銅膏價格是銀膏的1/3，取代銀燒結能夠使模組的材料成本降低。;High thermal conductivity die attach materials and process design are key factors affecting thermal management and reliability of automotive silicon carbide power modules. Sintered die attach offers superior temperature margin, thermal expansion coefficient, and power density compared to solder for silicon carbide power modules. The market trend toward affordable electric vehicles is driving accelerated development of copper sintering processes and yield improvement. Based on previous copper sintering triangular compensation theory, this study replaced the existing silver sintering material in automotive traction inverter power modules with copper sintering, while controlling the sintering time to 180 seconds for production capacity optimization. Therefore, this research conducted copper sintering die attach of silicon carbide chips on silicon nitride ceramic substrates. Parameter setting experiments were performed based on literature review, followed by analysis of the effects of temperature and pressure on sintering layer void rate, thermal resistance (Rth), and shear strength, thereby establishing a universal and standardized thermal management foundation. Experimental results showed that X-ray or ultrasonic canning had difficulty identifying the copper sintering area boundary, making void rate quantification impossible. At 260°C, both 15 MPa and 20 MPa achieved similar thermal resistance and shear strength. When maintaining 15 MPa pressure and increasing temperature from 260°C to 275°C, Rth decreased from 0.4925 (°C/W) to 0.2860 (°C/W), and shear strength improved from 4.1 ± 2.73 MPa to 25.94 ± 4.84 MPa. Silver sintering measured Rth of 0.2485 (°C/W) and shear strength of 41.24 ± 4.28 MPa under 180 second sintering time. Copper sintering demonstrates process feasibility without requiring silver plating on ceramic substrates. The copper paste price is one-third that of silver paste, enabling material cost reduction for modules when replacing silver sintering.
Appears in Collections:	[Executive Master of Mechanical Engineering] Electronic Thesis & Dissertation

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