以低壓化學氣相沉積成長六方氮化硼薄膜於矽基板其均勻性與時間可靠性之研究

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姓名

韋人豪(Jen-Hao Wei) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以低壓化學氣相沉積成長六方氮化硼薄膜於矽基板其均勻性與時間可靠性之研究

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至系統瀏覽論文 (2026-12-30以後開放)

摘要(中)

本研究旨在利用低壓化學氣相沉積法以高溫石英爐管在矽基板上成長六方氮化硼薄膜，發現當沉積時有大量的雜質包含在六方氮化硼薄膜裡，會造成薄膜在大氣下容易剝落，所以我們改善了爐內腔體環境，並使六方氮化硼薄膜在大氣下更加穩定可靠。
在高溫石英爐管內沉積的六方氮化硼薄膜，發現基板位置會嚴重影響薄膜均勻性，也必須要足夠的前驅物來反應，我們最終得到六方氮化硼的拉曼光譜圖半高寬在30~40 cm-1，拉曼特徵峰(E2g 振動模式)在1369~1372 cm-1。

摘要(英)

Hexagonal boron nitride films were grown by using the high-temperature and low-pressure chemical vapor deposition on silicon substrates. When the hexagonal boron nitride films contain a lot of impurities during the deposition, the crack and spalling of the films will be in the atmosphere.
We improved the furnace environment and hexagonal boron nitride films more stable and reliable. The uniformity of the hexagonal boron nitride film deposited in the high-temperature quartz furnace tube was dependent on the position of the substrates and the amount of precursors. Finally, the hexagonal boron nitride films have been achieved successfully with the Raman spectrum full-width at half-maximum of 30~40 cm-1 at the E2g mode of 1369~1372 cm-1.

關鍵字(中)

★ 六方氮化硼
★ 低壓化學氣相沉積

關鍵字(英)

論文目次

目錄
摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 ix

第一章緒論 1
1-1前言 1
1-2研究動機 3
第二章基礎理論 4
2-1氮化硼的基本性質 4
2-2硼烷氨(Ammonia brance, AB)特性 6
2-3六方氮化硼製備方式 7
第三章實驗架構與量測儀器介紹 16
3-1實驗儀器 16
爐管系統 16
3-2量測儀器 17
3-2-1 拉曼光譜儀(Raman) 17
3-2-2 X射線光電子能譜儀(X-ray photoelectron spectroscopy，XPS) 19
3-2-3 傅立葉轉換紅外光譜儀(Fourier-transform infrared spectroscopy, FTIR) 20
3-3 六方氮化硼製作流程方法與製程參數 22
第四章實驗結果 26
4-1 六方氮化硼薄膜成長分析 26
4-1-1製程環境改進 26
4-1-2前驅物硼烷氨之影響 26
4-1-3製程氣體比例之影響 30
4-1-4製程時間之影響 30
4-1-5均勻性分析 36
4-1-6 XPS量測 44
4-2 六方氮化硼可靠性分析 48
第五章結論與未來研究 55
5-1 結論 55
5-2 未來研究 55
參考文獻 56

參考文獻

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2021-12-28

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