| 摘要(英) |
In this research, we first use Nanospherical-Lens Lithography (NLL) to fabricate metal nano-elliptical disk arrays. This method can be used to fabricate a large-area process at a very low cost. The required metal nano-elliptical disk array. In addition, we used the secondary etching process technology of GaN material to fabricate an elliptical nanopillar array of LED. This nanopillar array has previously been proven to be used to make LED that emit linearly polarized light.
This study will use this same elliptical nanopillar structure to further test whether it can be used to measure linearly polarized light. And by adjusting various process parameters, including the ratio of the major axis of the ellipse to the minor axis and the height of the pillar, the maximum polarization selection ratio can be achieved. In addition, we will also study and change the design of some important structures, including the material selection of the electric insulating layer and the light blocking layer, in order to achieve better component performance. In addition, we will also conduct electromagnetic simulation analysis on the target component to further design a more suitable component structure for the application.
In past research, we know that the output light of nanopillar LED is not polarization sective. However, if we evaporation an opaque metal film (such as Ni) between the nanopillars as a light blocking layer, the metal layer reflects a part of the emitted light, and if a layer of Ni metal is coated on the surface an electric insulating layer (such as SiO2) is used to avoid short of components, and then metal electrodes are plated to obtain a nano-LED array with a high polarization selectivity ratio.
We found that if the Ni light-shielding layer and the SiO2 insulating layer are replaced with Ag2S, the process steps can be effectively simplified. This is because when silver reacts chemically with sulfide, insulating silver sulfide is produced. In the atmospheric environment, silver sulfide is a black cubic crystal, which is an opaque material, so it can also be used as a light blocking layer. Therefore, we took Ag2S as the experimental group and tried to simplify the two processes of the light-shielding layer and the sensory layer into one.
Although the polarization selection ratio is not ideal in the experimental analysis, in the end, we obtained a good parameter by simulation analysis results, which can increase the value of the Polarization Difference Ratio of the photodetector to 0.753, and convert it into the Selection Ratio to get Ex : Ey = 7.09, we also found from the simulation that the minor axis must be around 50nm to have a relatively high polarization selection ratio, so we will use the best parameters of the simulation to make our photodetector. |
| 參考文獻 |
[1] Denkov, N., Velev, O., Kralchevski, P., Ivanov, I., Yoshimura, H., Nagayama, K. Mechanism of Formation of Two-Dimensional Crystals from Latex Particles on Substrates. Langmuir 8, doi:10.1021/la00048a054 (1992).
[2] Anjeanette D. Ormonde, Erin C. M. Hicks, Jimmy Castillo, Richard P. Van Duyne, Nanosphere Lithography: Fabrication of Large-Area Ag Nanoparticle Arrays by Convective Self-Assembly and Their Characterization by Scanning UV-Visible Extinction Spectroscopy. Langmuir, vol. 20, doi:10.1021/la0494674 (2007).
[3] Wu, W., Katsnelson, A., Memis, O. G. & Mohseni, H. A deep sub-wavelength process for the formation of highly uniform arrays of nanoholes and nanopillars. Nanotechnology 18, doi:10.1088/0957-4484/18/48/485302 (2007).
[4] Wu, W., Dey, D., Memis, O. G., Katsnelson, A. & Mohseni, H. A Novel Self-aligned and Maskless Process for Formation of Highly Uniform Arrays of Nanoholes and Nanopillars. Nanoscale Research Letters 3, doi:10.1007/s11671-008-9124-6 (2008).
[5] Chang, Y. C. et al. High-throughput nanofabrication of infra-red and chiral metamaterials using nanospherical-lens lithography. Sci Rep 3, 3339, doi:10.1038/srep03339 (2013).
[6] Wu, W., Dey, D., Memis, O. G., Katsnelson, A. & Mohseni, H. Fabrication of Large Area Periodic Nanostructures Using Nanosphere Photolithography. Nanoscale Research Letters 3, doi:10.1007/s11671-008-9164-y (2008).
[7] Kuo, M. L., Kim, Y. S., Hsieh, M. L. & Lin, S. Y. Efficient and directed Nano-LED emission by a complete elimination of transverse-electric guided modes. Nano Lett 11, 476-481, doi:10.1021/nl103243n (2011).
[8] Yu-Jung Lu, Hon-Way Lin, Hung-Ying Chen, Yu-Chen Yang, Shangir Gwo. Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources. Applied Physics Letters 98, doi:10.1063/1.3597211 (2011).
[9] Chou, M. C. et al. Polarization-Selecting III-Nitride Elliptical Nanorod Light-Emitting Diodes Fabricated with Nanospherical-Lens Lithography. ACS Nano 12, 8748-8757, doi:10.1021/acsnano.8b04933 (2018).
[10] Qiming Li, Karl R. Westlake, Mary H. Crawford, Stephen R. Lee, Daniel D. Koleske, Jeffery J. Figiel, Karen C. Cross, Saeed Fathololoumi, Zetian Mi, George T. Wang. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. Optics Express 19, doi: 10.1364/OE.19.025528 (2011).
[11] Afshinmanesh, F., White, J. S., Cai, W. & Brongersma, M. L. Measurement of the polarization state of light using an integrated plasmonic polarimeter. Nanophotonics 1, 125-129, doi:10.1515/nanoph-2012-0004 (2012).
[12] H. G. Berry、G. Gabrielse & A. E. Livingston. Measurement of the Stokes parameters of light. Applied Optics 16, 3200-3205, doi:10.1364/AO.16.003200 (1977).
[13] Cao, L., Fan, P., Barnard, E. S., Brown, A. M. & Brongersma, M. L. Tuning the color of silicon nanostructures. Nano Lett 10, 2649-2654, doi:10.1021/nl1013794 (2010).
[14] Proust, J., Bedu, F., Gallas, B., Ozerov, I. & Bonod, N. All-Dielectric Colored Metasurfaces with Silicon Mie Resonators. ACS Nano 10, 7761-7767, doi:10.1021/acsnano.6b03207 (2016). |
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit