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姓名 賴允文(Yun-Wen Lai) 查詢紙本館藏 畢業系所 機械工程學系 論文名稱 可檢測大電流之磁場感測器設計
(DESIGN OF A CMOS-MEMS THREE-AXIS MAGNETIC SENSOR FOR DETECTING LARGE CURRENT)相關論文 檔案 [Endnote RIS 格式]
[Bibtex 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
至系統瀏覽論文 ( 永不開放)
摘要(中) 本研究提出一種應用勞倫茲力來感測磁場之電容式磁場感測器,利用
台灣半導體研究中心提供之 UMC 0.18 μm 1P6M CMOS 製程提高元件之良
率,建構出機械結構以及電容讀取電路,透過激發電流與待測磁場產生勞
倫茲力帶動感測電極間距的改變,最後再配合電容讀取電路進行磁場的量
測。在元件的設計上,我們結合兩種不同之感測電極結構,使感測電容能
針對結構之同平面及出平面運動進行量測,藉此完成三軸之磁場量測。最
後,我們將磁場感測器應用在電流量測中,藉由電流導線會在其周圍產生
磁場之特性成功對電流大小進行量測。摘要(英) This research proposes a Lorentz force based capacitive magnetic sensor.
The sensor’s mechanical structure and circuit was implemented using the
standard UMC 0.18 m 1P6M CMOS process. The Lorentz force generated by
the excitation current and magnetic field would change the gap between the
sensing electrodes so that we could measure the magnetic field by the readout
circuit. By integrating two different capacitance structures, this design could
respectively sense out-of-plane and in-plane motion so that we could measure
three-axis magnetic field. Finally, we could take this sensor as a current sensor by
measuring the magnetic field generated from the current.關鍵字(中) ★ 勞倫茲力
★ 磁場感測器關鍵字(英) ★ CMOS-MEMS 論文目次 摘要........................................................................................................................I
ABSTRACT......................................................................................................... II
目錄.....................................................................................................................III
圖目錄.................................................................................................................VI
表目錄.................................................................................................................. X
第一章 背景與文獻回顧..................................................................................... 1
1.1 前言 ............................................................................................................ 1
1.2 研究目的與動機 ........................................................................................ 1
1.3 磁感測器 .................................................................................................... 1
1.4 文獻回顧 .................................................................................................... 2
1.5 章節架構 .................................................................................................... 8
第二章 相關原理介紹......................................................................................... 9
2.1 安培定律 .................................................................................................... 9
2.2 勞倫茲力 .................................................................................................. 11
2.3 共振現象 .................................................................................................. 11
2.4 振動模型 .................................................................................................. 12
2.5 感測機制 .................................................................................................. 13
第三章 元件的設計與模擬............................................................................... 16
3.1 感測電容設計 .......................................................................................... 16
3.2 元件結構設計 .......................................................................................... 17
3.3 模擬方法與結果 ...................................................................................... 20
3.3.1 模擬流程........................................................................................... 21
3.3.2 製程模擬........................................................................................... 22
3.3.3 共振頻分析....................................................................................... 25
第四章 元件製作流程簡介............................................................................... 27
4.1 UMC 0.18M 1P6M 製程概述................................................................. 27
4.2 台灣半導體研究中心後製程概述.......................................................... 28
第五章 量測結果的分析與討論....................................................................... 31
5.1 量測架設................................................................................................... 31
5.2 元件量測................................................................................................... 32
5.3 輸出訊號量測........................................................................................... 38
5.4 應用於電流量測之結果........................................................................... 55
第六章 結論....................................................................................................... 58
參考文獻............................................................................................................. 59參考文獻 [1] c. Wikipedia, "Microelectromechanical systems," in Wikipedia, The Free
Encyclopedia., ed.
[2] G. Laghi et al., "Torsional MEMS Magnetometer Operated off-Resonance
for in-Plane Magnetic Field Detection," Sensors and Actuators, 2014.
[3] E. Mehdizadeh, V. Kumar, and S. Pourkamali, "Sensitivity Enhancement of
Lorentz Force MEMS Resonant Magnetometers via Internal ThermalPiezoresistive Amplification," IEEE Electron Device Letters, vol. 35, no. 2,
pp. 268-270, 2014, doi: 10.1109/led.2013.2293349.
[4] A. Herrera-May, M. Lara-Castro, F. López-Huerta, P. Gkotsis, J.-P. Raskin,
and E. Figueras, "A MEMS-based magnetic field sensor with simple
resonant structure and linear electrical response," Microelectronic
Engineering, vol. 142, pp. 12-21, 2015.
[5] S. Ghosh and J. E. Y. Lee, "A Lorentz force magnetometer based on a
piezoelectric-on-silicon square-extensional mode micromechanical
resonator," Applied Physics Letters, vol. 110, no. 25, 2017, doi:
10.1063/1.4989675.
[6] L. Wu, Z. Tian, D. Ren, and Z. You, "A Miniature Resonant and Torsional指導教授 陳世叡(Shih-Jui Chen) 審核日期 2022-9-21 推文 plurk
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