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姓名 陳弘諺(Chen-Hong Yan) 查詢紙本館藏 畢業系所 機械工程學系 論文名稱 P 型導電高分子薄膜強化PN接面電化學之蝕刻之研究
(Electrochemical etching of PN junction enhanced by P-type conductive polymer films)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 電洞是電化學蝕刻時的必要因素，然而N型半導體的主要載流子為電子，因此一般來說N型半導體難以透過普通的電化學方式進行蝕刻，需要額外的輔助讓電化學反應介面產生電洞造成蝕刻。本研究透過導電高分子在晶圓進行晶背電化學實驗時可以保護元件不受化學溶液或是碰撞損害，可以運用到晶片的晶背研磨製程，此外也能改善半導體接面間的能隙及空乏區，使電洞傳導率變快，實驗以雙蝕刻槽作為主要實驗設備，將導電高分子PEDOT/PSS塗佈於N型矽上，形成N/PEDOT/P異質接面結構，而無需加入金屬片，之後在暗室中施加電場進行電化學實驗。實驗結束後，可直接拆除輔助的P型矽，並確保N型矽上的導電高分子薄膜保持無汙染。實驗將使用不同摻雜濃度的N型矽與P型矽進行不同組合的PN接面進行電化學蝕刻。蝕刻完成後，將進行紫外光照射、場發射掃描式電子顯微鏡(SEM)和光致發光光譜儀(PL)分析，並通過實驗過程中電壓電流的變化繪製趨勢圖以觀察效果。從SEM圖和電壓電流圖的分析中可以發現，塗佈導電高分子的試片蝕刻速率更快，電流導通速度也更明顯提升，且結構略有不同。在光致發光方面，亮度也更高，且通過提高試片的摻雜濃度，實驗效果更為突出。 摘要(英) Hole is a necessary factor in electrochemical etching. However, the main carrier of N-type semiconductors is electrons, so it is generally difficult for N-type semiconductors to be etched by ordinary electrochemical methods, and additional assistance is needed to generate hole in the electrochemical reaction interface to cause etching. In this study, conductive polymers can protect the components from chemical solution or collision damage when conducting electrochemical experiments on the wafer back, which can be applied to the wafer back grinding process. In addition, the energy gap and void region between semiconductor junctions can be improved to make the hole conductivity faster. The experiment uses double etching slots as the main experimental equipment. The conductive polymer PEDOT/PSS is coated on N-type silicon to form N/PEDOT/P heterogeneous junction structure without adding metal sheet, and then an electric field is applied in a dark room for electrochemical experiments. After the experiment, the auxiliary P-type silicon can be removed directly, and the conductive polymer film on the N-type silicon can be ensured to remain pollution-free. In the experiment, the PN junction with different combinations of N-type silicon and P-type silicon with different doping concentrations will be electrochemical etched. After the etching is completed, ultraviolet irradiation, field emission scanning electron microscope (SEM) and photoluminescence spectrometer (PL) analysis will be carried out, and trend graphs will be drawn to observe the effect through the changes of voltage and current during the experiment. From the analysis of SEM and voltage-current diagram, it can be found that the etching rate of the test piece coated with conductive polymer is faster, the current conduction speed is also more obvious, and the structure is slightly different. In terms of photoluminescence, the brightness is also higher, and the experimental effect is more prominent by increasing the doping concentration of the test piece. 關鍵字(中) ★ PN接面
★ 電化學蝕刻
★ SEM
★ PL
★ 光致發光
★ 導電高分子
★ 異質接 面關鍵字(英) ★ PN junction
★ electrochemical etching
★ SEM
★ PL
★ photoluminescence
★ conductive polymer
★ heterogeneous junction論文目次 目錄
摘要………………………………………………………………........…………….…i
Abstrast……………………….………...….……….….….………..………..…….….ii
誌謝……………………………………………………………………………...........iv
目錄……………………………………………………………………………….…...v
圖目錄………………………………………………………………………………..vii
表目錄…………………………………………………………………………….......xi
第一章 緒論………………..…………………………………………….……..…….1
1-1 前言……………………………………………………………...………...….1
1-2 研究背景……………………………………………………………...………2
1-3 研究動機及目的……………………………..……….………………………3
第二章 原理與文獻回顧………………………………………………….….............4
2-1 多孔矽理論…………………………………………………………...………4
2-1-1 擴散限制模型(The Diffusion-Limit Model)…………………………4
2-1-2 貝爾模型(The Beale Model).………………………..……………..…5
2-1-3 量子模型(The Quantum Model).………………...........….......………5
2-2 空乏區(Depletion Region).…………………………………….……………..6
2-2-1 摻雜濃度(Carrier concentration)..…………………………………….6
2-2-2 蕭特基能障高度(Schottky barrier height)………………………...….6
2-2-3 空乏區寬度(Depletion region width)...…………………………….…7
2-3 多孔矽製作…………………………………………………….……………..8
2-3-1 乾式蝕刻法(Dry etching).…………………………………………….8
2-3-2 濕式蝕刻法(Wet etching).………………………………………...….8
2-3-3 電化學蝕刻法(Electrochemical etching).………………………….…9
2-4 蝕刻機制……………………………………………………………...……..10
2-4-1 氫氟根(hydrofluoride)為底之蝕刻機制………………………..…...12
2-4-2 PN接面與電化學蝕刻關係………………………………..………..12
2-5 導電高分子…………………………………………………………...……..13
2-5-1 PEDOT:PSS……………………………………….……………..…...14
第三章 實驗步驟與方法……………………………………………………………16
3-1 矽晶圓前處理與清洗流程………………………………………………….16
3-2 實驗器材與設備介紹……………………………………………………….20
3-3 實驗步驟…………………………………………………………………….28
3-4 分析儀器…………………………………………………………………….32
第四章 結果與討倫…………………………………………………………………35
4-1 添加不同溶劑對於導電高分子薄膜性質的改善….……………………....35
4-2 根據電壓電流圖與SEM探討導電高分子對於電化學系統之提升…..…39
4-3 蝕刻實驗過程中之電壓電流變化圖..…………………………………...…42
4-4 蝕刻後矽晶圓於日光燈及UV燈下觀察結果……………………..……...46
4-5 PL檢測結果………………………………………………………...………50
4-6 CFE-SEM表面形貌及剖面觀察結果……………………………...………54
第五章 結論與未來展望……………………………………………………………72
第六章 參考文獻……………………………………………………………………73
圖目錄
圖2-1 PEDOT/n-Si蕭特基二極管的能帶結構示意圖………………...…...……….7
圖2-2 矽表面多孔矽層與電化學拋光的I-V圖…………………......………..…..10
圖2-3 穩態時的能帶圖……………………………………………………………..12
圖2-4 PSS與PEDOT之結構圖…………………………………...……………….14
圖2-5 PEDOT:PSS與N型矽的能階圖…………..………………………………..15
圖3-1 六吋矽晶圓試片……………………………………………………………..16
圖3-2 雙槽垂直式蝕刻槽…………………………….…………………………….21
圖3-3 Twintex電源供應器……………………………………..…………………...21
圖3-4 電源供應器附設軟體Programmable DC Power Supply……….…………..22
圖3-5 白金電極……………………………………………………………………..22
圖3-6 PEDOT/PSS…………………………………………………………………..23
圖3-7 異丙醇………………………………………………………………………..23
圖3-8 乙二醇………………………………………………………………………..24
圖3-9 甘油…………………………………………………………………………..24
圖3-10 氫氟酸………………………………………………………………………25
圖3-11 酒精……………………….………………………………………………...25
圖3-12 超音波震盪機………………………………………………………………26
圖3-13 加熱台………………………………………………….…………………...26
圖3-14 氮氣桶………………………………………………….…………………...27
圖3-15 塗佈機………………………………………………….…………………...27
圖3-16 高溫爐………………………………………………….…………………...28
圖3-17 電化學蝕刻之實驗架設圖…………………………….…………………...29
圖3-18 實驗流程圖…………………………………………….…………………...30
圖3-19 高強度紫外燈………………………………………….…………………...32
圖3-20 CFE-SEM……………………………………………….…………………...33
圖3-21 PL量測機台……………………………...…………….…………………...34
圖4-1 未添加溶劑蝕刻前……………………………………………...…………...36
圖4-2 未添加溶劑蝕刻後…………………………………………...……………...36
圖4-3 添加溶劑蝕刻前……………....……………………………………………..36
圖4-4 添加溶劑蝕刻後………………….……………………….…………………36
圖4-5 PEDOT:PSS薄膜、600X、表面圖……..……...…………………………...37
圖4-6 PEDOT:PSS薄膜、5000X、表面圖……………………………………..…37
圖4-7 PEDOT:PSS薄膜、600X、剖面圖………………………..………………..38
圖4-8 PEDOT:PSS薄膜、5000X、剖面圖………………………………..………38
圖4-9 N/P、N/PEDOT/P之電壓與時間關係圖…………………...…...………….40
圖4-10 N/P、N/PEDOT/P之電流與時間關係圖…………………………….……40
圖4-11 N/P蝕刻深度………………………………………………………………..41
圖4-12 N/PEDOT/P蝕刻深度………….………………………………...………...41
圖4-13 N、N/P、N/PEDOT/P之電壓與時間關係圖………………………….….43
圖4-14 N、N/P、N/PEDOT/P之電流與時間關係圖………………………….….43
圖4-15 N/PEDOT/(P、P+、P++、P+++)之電壓與時間關係圖………………….44
圖4-16 N/PEDOT/(P、P+、P++、P+++)之電流與時間關係圖………………….44
圖4-17 (N、N+、N++)/PEDOT/P之電壓與時間關係圖……………….....……...45
圖4-18 (N、N+、N++)/PEDOT/P之電流與時間關係圖……………….....……...45
圖4-19 N、N/P、N/PEDOT/P之PL檢測圖………………………….…………...51
圖4-20 N/PEDOT/(P、P+、P++、P+++)之PL檢測圖…………………………...52
圖4-21 N/P、(N、N+、N++)/PEDOT/P之PL檢測圖………………………...…52
圖4-22 N、600X、表面圖………………………………………………………….55
圖4-23 N、5000X、表面圖………………………..……………………………….55
圖4-24 N、400X、剖面圖………………………………………………………….56
圖4-25 N、5000X、剖面圖..……………………………………………………….56
圖4-26 N/P、600X、表面圖………………………………..……………………...57
圖4-27 N/P、5000X、表面圖…………………..………………………………….57
圖4-28 N/P、600X、剖面圖……………………………………………………….58
圖4-29 N/P、5000X、剖面圖……………………………………………………...58
圖4-30 N/PEDOT/P、600X、表面圖……………………………………………...59
圖4-31 N/PEDOT/P、5000X、表面圖…………………………………………….59
圖4-32 N/PEDOT/P、400X、剖面圖……………………………………..……….60
圖4-33 N/PEDOT/P、5000X、剖面圖…………………………………………….60
圖4-34 N/PEDOT/P+、600X、表面圖………………………………..…………...61
圖4-35 N/PEDOT/P+、5000X、表面圖……………………………….…………..61
圖4-36 N/PEDOT/P+、400X、剖面圖……………………………...……………..62
圖4-37 N/PEDOT/P+、5000X、剖面圖…………………………………………...62
圖4-38 N/PEDOT/P++、600X、表面圖…………………………………………...63
圖4-39 N/PEDOT/P++、5000X、表面圖………………………………………….63
圖4-40 N/PEDOT/P++、400X、剖面圖………………….………………..………64
圖4-41 N/PEDOT/P++、5000X、剖面圖………………………………...………..64
圖4-42 N/PEDOT/P+++、600X、表面圖…………………………………...……..65
圖4-43 N/PEDOT/P+++、5000X、表面圖…………………………………...……65
圖4-44 N/PEDOT/P+++、400X、剖面圖……………………….…………………66
圖4-45 N/PEDOT/P+++、5000X、剖面圖………………………...………………66
圖4-46 N+/PEDOT/P、600X、表面圖…………………………………...………..67
圖4-47 N+/PEDOT/P、5000X、表面圖……………………………………...……67
圖4-48 N+/PEDOT/P、600X、剖面圖…………………………….………………68
圖4-49 N+/PEDOT/P、5000X、剖面圖…………………………………………...68
圖4-50 N++/PEDOT/P、600X、表面圖………………...…………………………69
圖4-51 N++/PEDOT/P、5000X、表面圖………………...………………………..69
圖4-52 N++/PEDOT/P、600X、剖面圖………….………………………………..70
圖4-53 N++/PEDOT/P、5000X、剖面圖…………………….……………………70
表目錄
表3-1 N型矽晶圓規格………………………………………………...……………17
表3-2 P型矽晶圓規格……………………………………………………………...18
表3-3 試片清洗方式………………………………………………………………..19
表3-4 N型矽試片及P型矽試片實驗組合………………………………………..31
表4-1 N、N/P、N/PEDOT/P蝕刻後於日光燈及紫外光燈下的觀察結果…........47
表4-2 N/PEDOT/P結構使用不同摻雜濃度的P型矽晶圓蝕刻後於日光燈及紫外燈下的觀察結果……………………………………………………………………..48
表4-3 N/PEDOT/P結構使用不同摻雜濃度的N型矽晶圓蝕刻後於日光燈及紫外燈下的觀察結果……………………………………………………………………..49
表4-4 PL測檢峰值結果…………………………………………....……………….53
表4-5 SEM結果整理表…………………………………………………………….71參考文獻 [1] Cheng Li, Zudong He, Qidi Wang, et al, "Performance Improvement of PEDOT:PSS/N-Si Heterojunction Solar Cells by Alkaline Etching", Springer Nature B.V., 2021.
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[39] Mooney, J., and Kambhampati, P., "Get the basics right: Jacobian conversion of wavelength and energy scales for quantitative analysis of emission spectra", Journal of Physical Chemistry Letters, pp. 3316-3318, 2013.指導教授 李天錫 審核日期 2024-7-18 推文 plurk
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