結合氧化鋅與鈣鈦礦之光偵測器與光敏電晶體元件開發

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姓名

廖偉捷(Wei-Jie Liao) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

結合氧化鋅與鈣鈦礦之光偵測器與光敏電晶體元件開發
(Development of photodetectors and phototransistors combining zinc oxide and perovskite)

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至系統瀏覽論文 (2030-1-30以後開放)

摘要(中)

本研究使用甲基胺碘化物鈣鈦礦(Methylammonium lead iodide, MAPbI3)，結合不同功函數的ZnO奈米顆粒(Zinc oxide nanoparticles, ZnO.NPs)作為電子傳輸層，並加入聚乙烯亞胺(Polyethyleneimine, PEI)緩衝層以改善界面穩定性。
研究光偵測器元件過程中，首先會分析標準元件特性，並與添加不同功函數ZnO的光偵測器進行性能比較。結果顯示，透過不同功函數ZnO和PEI緩衝層的引入，元件的外部量子效率(External Quantum Efficiency, EQE)從4 %提升至65 %，響應度(Responsivity, R)從0.016 A/W提升至0.297 A/W。此外，本研究優化了元件的通道尺寸，進一步提升元件性能。
本研究後續將光偵測器與電晶體結合，並探討ZnO功函數對光敏電晶體工作機制及性能的影響。藉由光閘效應，元件的開關比從255提升至8642，外部量子效率提升至125 %，響應度達到0.573 A/W。最終實現了元件的開關控制與性能優化，完成了鈣鈦礦光敏電晶體的開發。

摘要(英)

This study develops perovskite photodetectors and phototransistors based on zinc oxide (ZnO). Methylammonium lead iodide perovskite (MAPbI3) served as the active layer, combined with ZnO nanoparticles (ZnO.NPs) with tunable work functions as the electron transport layer. A polyethyleneimine (PEI) buffer layer was introduced to improve interface stability.
Photodetector performance was analyzed by comparing standard devices with those incorporating ZnO with different work functions. Results showed that work function tuning and the PEI buffer layer increased the external quantum efficiency (EQE) from 4% to 65% and responsivity from 0.016 A/W to 0.297 A/W. Channel dimension optimization further enhanced device performance.
The photodetectors were integrated with transistors to explore the effects of ZnO work functions on phototransistor mechanisms and performance. Through the photogating effect, the on/off ratio increased from 255 to 8642, EQE reached 125%, and responsivity improved to 0.573 A/W. This study achieved device switching control and performance optimization, completing the development of perovskite phototransistors.

關鍵字(中)

★ 鈣鈦礦
★ 光偵測器
★ 光敏電晶體
★ 光閘效應
★ 氧化鋅

關鍵字(英)

★ Perovskite
★ Photodetector
★ Phototransistor
★ Photogating effect
★ Zinc oxide

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 xi
第一章緒論 ……………………………………………………………………1
1-1 前言 1
1-2 有機光伏元件與有機光偵測器 2
1-3 鈣鈦礦光偵測器 4
1-4 有機場效應電晶體 6
1-5 有機場效應光敏電晶體 8
1-6 研究動機 9
第二章基本原理 10
2-1 有機光偵測器 10
2-1-1 有機光偵測器工作原理 10
2-1-2 有機光偵測器特性參數 12
2-2 有機場效應電晶體 14
2-2-1 有機場效應電晶體架構 14
2-2-2 有機場效應電晶體工作原理 17
2-2-3 有機場效應電晶體電流對電壓關係與參數 20
2-3光電流產生機制 23
2-3-1 光電導效應(Photoconductive effect, PCE) 23
2-3-2 光閘效應(Photogating effect, PGE) 23
2-3-3 光伏效應(Photovoltaic effect, PVE) 23
第三章實驗方法與架構 24
3-1 實驗材料介紹 24
3-1-1主動層材料 25
3-2 實驗儀器 27
3-2-1 手套箱(Glove Box) 27
3-2-2 熱蒸鍍機(Thermal Evaporation Coater) 28
3-2-3 原子層沉積(Atomic Layer Deposition, ALD) 29
3-2-4 紫外光臭氧清潔機(UV-Ozone) 30
3-2-5 阻抗分析儀(Impedance Analyzer) 31
3-2-6 旋轉塗佈機(Spin Coater) 31
3-2-7 半導體參數分析儀(Semiconductor Parameter Analyzer) 32
3-2-8 發光二極體(Light-Emitting Diode) 33
3-2-9 數位式示波器(Digital Oscilloscope) 34
3-2-10 UV-VIS-NIR分光光譜儀 34
3-3 元件製程方法 36
3-3-1 實驗溶液配置 36
3-3-2 鈣鈦礦光偵測器製程 36
3-3-3 鈣鈦礦光敏電晶體製程 39
第四章結果與討論 42
4-1 元件主動層性質分析 42
4-2光偵測器 44
4-2-1 MAPbI3光偵測器 44
4-2-2 元件性能表現 45
4-2-3 響應時間 47
4-2-4元件性能優化 49
4-3光敏電晶體 52
4-3-1 MAPbI3/3.9 eV ZnO.NPs光敏電晶體之工作機制 53
4-3-2 MAPbI3/3.9 eV ZnO.NPs光敏電晶體之元件表現 54
4-3-3 MAPbI3/4.3 eV ZnO.NPs光敏電晶體之工作機制 57
4-3-4 MAPbI3/4.3 eV ZnO.NPs光敏電晶體之元件表現 58
4-4元件性能比較 61
第五章結論與未來展望 62
參考文獻…………………………………………………………………………63

參考文獻

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指導教授

張瑞芬

審核日期

2025-1-20

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