| 摘要(英) |
Gallium nitride (GaN) has advantages in wide bandgap and thermal stability, making it a crucial material in the semiconductor industry. Additionally, due to its large nonlinear coefficient, it is also beneficial for research in the field of nonlinear optics. Traditionally, GaN thin films are predominantly deposited using metal-organic chemical vapor deposition (MOCVD) or wafer bonding techniques. The advantage of MOCVD lies in its ability to deposit high-quality GaN thin films with lattice structures. However, its drawback is the need to consider lattice matching during deposition. Without good lattice matching, high-quality thin films cannot be achieved. Typically, GaN thin films are deposited on sapphire substrates, which are expensive, lack compatibility with complementary metal-oxide-semiconductor (CMOS) processes, and require high-temperature processing. On the other hand, wafer bonding allows integration onto CMOS-compatible substrates, but the initial deposition still requires lattice-matched substrates, involves more complex processing steps, and results in poorer surface quality of the thin films. To enable the deposition of high-quality thin films on a variety of substrates, this thesis employs high-power impulse magnetron sputtering (HiPIMS) for GaN thin film deposition. This deposition method utilizes high-energy ion bombardment to sputter the thin film onto the surface. Its advantages include the ability to deposit at room temperature without requiring lattice matching, allowing easy deposition on various substrates.
The thesis begins with an introduction to the fundamental theories of waveguides and micro-ring resonators, followed by simulations of the designed photomask to analyze the modes and field distributions, ensuring stable and efficient propagation within the waveguide structure. Simulations are then conducted to compare the effects of surface coating layers on field propagation. Finally, the feasibility of hybrid waveguides is verified through simulations, and the bending losses of hybrid waveguides made from different materials are compared, demonstrating the advantages of GaN hybrid waveguides. Leveraging the ability to deposit GaN films on various substrates, this thesis fabricates waveguides and micro-ring resonators using GaN thin films deposited on silicon, glass, and quartz substrates. By improving fabrication processes and optimizing photomask designs, efforts were made to reduce losses in both low-confinement and high-confinement waveguides while enhancing the quality factor of microring resonators. Ultimately, micro-ring resonators with resonances were successfully fabricated on quartz and glass substrates, and hybrid waveguides made with GaN achieved a micro-ring resonator quality factor of 104.
In conclusion, this thesis demonstrates the use of HiPIMS to deposit GaN on quartz and glass substrates to fabricate micro-ring resonators with resonances. Additionally, hybrid GaN waveguides were first developed to avoid losses associated with etching, providing a more versatile approach for GaN waveguide applications. |
| 參考文獻 |
[1] Bogaerts, Wim, et al. "Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology." Journal of Lightwave Technology 23.1 (2005): 401.
[2] Rudenko, T. E., A. N. Nazarov, and V. S. Lysenko. "The advancement of silicon-on-insulator (SOI) devices and their basic properties." Semiconductor Physics, Quantum Electronics & Optoelectronics 23.3 (2020).
[3] Shi, Wei, Ye Tian, and Antoine Gervais. "Scaling capacity of fiber-optic transmission systems via silicon photonics." Nanophotonics 9.16 (2020): 4629-4663.
[4] Carroll, Lee, et al. "Photonic packaging: transforming silicon photonic integrated circuits into photonic devices." Applied Sciences 6.12 (2016): 426.
[5] Axt, Vollrath Martin, and Shaul Mukamel. "Nonlinear optics of semiconductor and molecular nanostructures; a common perspective." Reviews of Modern Physics 70.1 (1998): 145.
[6] Kaniber, Michael, et al. "Integrated superconducting detectors on semiconductors for quantum optics applications." Applied Physics B 122 (2016): 1-10.
[7] Gaeta, Alexander L., Michal Lipson, and Tobias J. Kippenberg. "Photonic-chip-based frequency combs." nature photonics 13.3 (2019): 158-169.
[8] Meier, Cedrik, et al. "Silicon nanoparticles: Absorption, emission, and the nature of the electronic bandgap." Journal of applied physics 101.10 (2007).
[9] Cheng, Qijin, Shuyan Xu, and Kostya Ken Ostrikov. "Controlled-bandgap silicon nitride nanomaterials: deterministic nitrogenation in high-density plasmas." Journal of Materials Chemistry 20.28 (2010): 5853-5859.
[10] Zheng, Yanzhen, et al. "Integrated gallium nitride nonlinear photonics." Laser & Photonics Reviews 16.1 (2022): 2100071.
[11] Kang, Moon Sung, et al. "Gallium nitride nanostructures for light-emitting diode applications." Nano energy 1.3 (2012): 391-400.
[12] Nakamura, Shuji, and Michael R. Krames. "History of gallium–nitride-based light-emitting diodes for illumination." Proceedings of the IEEE 101.10 (2013): 2211-2220.
[13] Fletcher, AS Augustine, and D. Nirmal. "A survey of Gallium Nitride HEMT for RF and high power applications." Superlattices and Microstructures 109 (2017): 519-537.
[14] Khan, M. A., et al. "New developments in gallium nitride and the impact on power electronics." 2005 IEEE 36th Power Electronics Specialists Conference. IEEE, 2005.
[15] Melton, William A., and Jacques I. Pankove. "GaN growth on sapphire." Journal of crystal growth 178.1-2 (1997): 168-173.
[16] Awan, Kashif M., et al. "Fabrication and optical characterization of GaN waveguides on (? 201)-oriented β-Ga 2 O 3." Optical Materials Express 8.1 (2018): 88-96.
[17] Zheng, Yanzhen, et al. "Integrated gallium nitride nonlinear photonics." Laser & Photonics Reviews 16.1 (2022): 2100071.
[18] Tsai, Tsung-Yen, et al. "MOCVD growth of GaN on sapphire using a Ga2O3 interlayer." Journal of The Electrochemical Society 158.11 (2011): H1172.
[19] Dragoi, Viorel, et al. "Direct wafer bonding of GaN for power devices applications." ECS Transactions 86.5 (2018): 23.
[20] Anders, Andre. "Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)." Journal of Applied Physics 121.17 (2017).
[21] Ji, Xingchen, et al. "Ultra-low-loss on-chip resonators with sub-milliwatt parametric oscillation threshold." Optica 4.6 (2017): 619-624.
[22] 低限制氮化矽波導之高品質因子微環形共振腔製程研究. 2023. PhD Thesis. National Central University.
[23] Wu, Shih-Hsin, et al. "Fabrication of gallium nitride waveguide resonators by high-power impulse magnetron sputtering at room temperature." APL Photonics 9.1 (2024).
[24] Dhatt, Gouri, Emmanuel Lefrancois, and Gilbert Touzot. Finite element method. John Wiley & Sons, 2012.
[25] Yee, Kane. "Numerical solution of initial boundary value problems involving Maxwell′s equations in isotropic media." IEEE Transactions on antennas and propagation 14.3 (1966): 302-307.
[26] Voigt, Anja, et al. "Improved adhesion of novolac and epoxy based resists by cationic organic materials on critical substrates for high volume patterning applications." Advances in Patterning Materials and Processes XXXI. Vol. 9051. SPIE, 2014.
[27] Niehusmann, Jan, et al. "Ultrahigh-quality-factor silicon-on-insulator microring resonator." Optics letters 29.24 (2004): 2861-2863.
[28] Xiao, Shijun, et al. "Modeling and measurement of losses in silicon-on-insulator resonators and bends." Optics Express 15.17 (2007): 10553-10561.
[29] Feng, Shaoqi, et al. "Silicon photonics: from a microresonator perspective." Laser & photonics reviews 6.2 (2012): 145-177.
[30] Xiao, Shijun, et al. "Compact silicon microring resonators with ultra-low propagation loss in the C band." Optics express 15.22 (2007): 14467-14475.
[31] Bal?ytis, A., et al. "High precision fabrication of antennas and sensors." Ninth International Symposium on Precision Engineering Measurement and Instrumentation. Vol. 9446. SPIE, 2015.
[32] He, Zhaoqin, et al. "Ultra-high Q Microring Resonators on Gallium-nitride-on-sapphire Platform." 2023 Opto-Electronics and Communications Conference (OECC). IEEE, 2023.
[33] Xiong, Chi, et al. "Integrated photonic circuits in gallium nitride and aluminum nitride." International Journal of High Speed Electronics and Systems 23.01n02 (2014): 1450001.
[34] 用於玻璃基板上低損耗波導之研究. 2024. PhD Thesis. National Central University. |
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