氮化矽表面雷射處理特徵分析及其對化學鍍銅層接合性能的影響

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姓名

楊子毅(Zi-Yi Yang) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

氮化矽表面雷射處理特徵分析及其對化學鍍銅層接合性能的影響
(Surface Characteristics of Laser-Processed Silicon Nitride and Their Effects on the Bonding Performance of Electroless Copper Layers)

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至系統瀏覽論文 (2030-1-1以後開放)

摘要(中)

氮化矽陶瓷（Si?N?）作為一種具有高強度、耐高溫和低膨脹係數的優異基板材料，逐漸成為高性能電子設備中的重要材料，其在高溫和高負載條件下依然能保持穩定的物理及化學性能，並具備耐磨性、抗腐蝕性和抗熱震性，廣泛應用於航空航天、汽車工業以及電子封裝等領域，此外氮化矽陶瓷的低熱膨脹係數和良好的絕緣性能使其成為功率電子模組中的理想基板材料。
本研究旨在利用奈秒雷射表面處理技術，研究不同雷射能量密度對氮化矽陶瓷基板表面形貌的影響，針對表面微結構的檢測方法，一般以計算平均表面粗糙度(Arithmetic Mean Surface Roughness，Sa)及算術平均粗糙度（Arithmetic Mean Roughness，Ra）兩種方法來檢測為主，本研究加入以光學方法計算其雷射表面處理後的表面積變化及表面輪廓線平坦化後的長度變化，並與接合強度測試結果進行討論。
關於接合方法，過去普遍為透過高溫和高壓的擴散接合法為主，本研究此次以相對較低溫且無須施加壓力的化學還原鍍銅法來進行接合，化學還原鍍銅技術在電子封裝中具有重要作用，相較於傳統電鍍，化學鍍銅無需外加電流，特別適合於形狀複雜的基材表面覆蓋，該技術通過精確控制溶液參數來調節鍍層厚度，進一步提升其電氣性能，這使其在高性能電子設備的應用中極具潛力，本研究也會對透過文獻與實驗結果對這兩種接合方法進行接合界面的討論。
實驗結果顯示，隨著雷射能量密度的增加，氮化矽陶瓷基板的粗糙度、表面積及輪廓線長度都有顯著增加，從而增強了銅層的附著力和剝離強度。當雷射能量密度達到94.09 J/cm2時，剝離強度達到最大值，表明雷射處理能夠顯著改善陶瓷基板的表面結構，為化學鍍銅層提供更強的機械錨定效應和化學反應位點。

摘要(英)

Silicon nitride (Si?N?) ceramics, known for their high strength, superior thermal stability, and low coefficient of thermal expansion, have progressively become vital substrate materials for high-performance electronic devices. These ceramics exhibit stable physical and chemical properties under high-temperature and high-load conditions, along with exceptional wear resistance, corrosion resistance, and thermal shock resistance. Such characteristics render them widely applicable in aerospace, automotive industries, and electronic packaging. Additionally, their low coefficient of thermal expansion and excellent insulating properties make silicon nitride ceramics ideal substrate materials for power electronic modules.
This study utilizes nanosecond laser surface treatment to investigate the effects of varying laser energy densities on the surface morphology of silicon nitride ceramic substrates. Surface microstructural characterization primarily involves the measurement of arithmetic mean surface roughness (Sa) and arithmetic mean roughness (Ra). Furthermore, this study integrates optical methods to calculate surface area changes and contour length variations after laser treatment and correlates these findings with the bonding strength test results.
Conventional bonding methods predominantly rely on high-temperature and high-pressure diffusion bonding. In contrast, this study employs electroless copper plating via chemical reduction as a relatively low-temperature and pressure-free bonding method. Electroless copper plating is a key technique in electronic packaging due to its ability to coat complex substrate geometries without requiring external currents. By precisely controlling solution parameters, this method enables the regulation of plating thickness, thereby enhancing electrical properties. These advantages position electroless copper plating as a highly promising approach for high-performance electronic applications. This study also examines bonding interface characteristics through a comparative analysis of diffusion bonding results reported in the literature and experimental findings.
Experimental results demonstrate that increasing laser energy density significantly enhances the roughness, surface area, and contour length of silicon nitride ceramic substrates. These changes lead to enhanced adhesion and increased peel strength of the copper layer. At a laser energy density of 94.09 J/cm2, the peel strength reaches its peak, indicating that laser treatment effectively modifies the surface structure of ceramic substrates. This enhancement provides stronger mechanical anchoring effects and additional chemical reaction sites for the electroless copper layer.

關鍵字(中)

★ 氮化矽陶瓷基板
★ 化學鍍銅
★ 雷射表面處理
★ 剝離強度測試

關鍵字(英)

★ Silicon Nitride Ceramic Substrates
★ Electroless Copper Plating
★ Laser Surface Treatment
★ Peel Strength Test

論文目次

中文摘要 ii
ABSTRACT iv
CONTENTS vi
LIST OF FIGURES ix
LIST OF TABLES xii
Chapter 1 緒論 1
1.1 前言 1
1.2 研究背景與目的 2
1.3 氮化矽陶瓷材料 5
1.3.1 材料演進 5
1.3.2 材料簡介與製造方法 7
Chapter 2 文獻回顧 9
2.1 金屬與陶瓷的接合製程 9
2.1.1 擴散接合法 12
2.1.2 雷射輔助擴散接合法 18
2.2 金屬與陶瓷材料鍵結 21
2.2.1 物理鍵結 21
2.2.2 化學鍵結 24
2.3 化學鍍銅機制探討 26
Chapter 3 研究方法 30
3.1 實驗方法與流程 30
3.2 實驗材料與試片製備 31
3.2.1 實驗材料 31
3.2.2 試片製備 33
3.3 實驗細節與設計 33
3.3.1 奈秒雷射規格及系統 33
3.3.2 雷射加工 35
3.3.3 化學還原鍍銅法 40
3.3.4 接合強度測試 42
3.4 檢測分析儀器 44
Chapter 4 結果與討論 50
4.1 雷射表面處理對氮化矽的影響探討 50
4.1.1 雷射對氮化矽表面形貌的影響 50
4.1.2 雷射對氮化矽橫截面形貌的影響 53
4.1.3 不同雷射能量密度對氮化矽表面處理深度影響 54
4.1.4 不同雷射能量密度對氮化矽表面粗糙度影響 56
4.1.5 不同雷射能量密度對氮化矽表面長度變化影響 61
4.1.6 不同雷射能量密度對氮化矽表面面積影響 64
4.2 雷射表面處理對氮化矽表面潤濕角的影響 67
4.3 氮化矽陶瓷基板化學鍍銅之研究分析 69
4.3.1 化學鍍銅結果分析探討 69
4.3.2 電性量測與分析 72
4.4 氮化矽陶瓷基板表面與接合介面的微觀形貌 74
4.4.1 雷射表面處理後的微觀形貌觀察 74
4.4.2 雷射能量密度對氮化矽表面形貌的影響 77
4.4.3 氮化矽表面雷射處理後EDS成分分析 79
4.4.4 接合介面的微觀結構與EDS成分分析 81
4.5 氮化矽陶瓷基板化學鍍銅之接合強度測試 87
4.5.1 剝離強度測試結果與分析 87
4.6 氮化矽陶瓷基板與化學鍍銅接合之綜合討論 90
Chapter 5 結論與未來工作 93
5.1 結論 93
5.2 未來工作 94
參考文獻 96
碩士論文口試教授問題集 98

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指導教授

董必正

審核日期

2025-1-9

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