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    顯示項目61801-61825 / 83955. (共3359頁)
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    日期題名作者
    2025-07-24 氮化硼在(100)矽基板上的磊晶成長與特性分析;Growth and Characterization of Boron Nitride on Si(100) Substrates 許毓樺; Hsu, Yu-Hua
    2024-07-30 氮化硼應用於紫外光發光二極體的特性分析與研製;Analysis and fabrication of the ultraviolet LEDs with boron nitride 倪咸文; HSIEN-WEN, NI
    2018-07-26 氮化硼磊晶層之成長與分析;Growth and characterization of Boron Nitride epitaxial layer 盧彥均; Lu, Yen-Chun
    2020-07-24 氮化硼表面的高反射金屬電極;Highly reflective metal contacts on boron nitride 陳治佑; Chen, Chin-Yu
    2018-12-19 氮化硼鋁鎵銦異質結構磊晶與特性研究;Epitaxial Growth and Characterization of Balgainn Hetrostructures 綦振瀛; 張文豪
    2019-02-21 氮化硼鋁鎵銦異質結構磊晶與特性研究;Epitaxial Growth and Characterization of Balgainn Hetrostructures 綦振瀛; 張文豪
    2020-01-13 氮化硼鋁鎵銦異質結構磊晶與特性研究;Epitaxial Growth and Characterization of Balgainn Hetrostructures 綦振瀛; 張文豪
    2006-06-29 氮化銦奈米柱之光學性質研究; Optical characteristics of InN nanorods 劉漢鈞; Han-Chun Liu
    2006-06-23 氮化銦量子點表面形貌與結構特性研究; Morphological and Structural Properties of InN Quantum Dots 陳明暘; Ming-Yang Chen
    2000-07-13 氮化銦鎵/氮化鎵多層量子井之光學特性研究 郭文泉; Wen-Quin Guo
    2000-06-29 氮化銦鎵/氮化鎵多重量子井的激發光譜; Edge-emission and surface-emission spectra of InGaN/GaN multiple quantum well structures 莊惠雯; Hui-wen Chuang
    2014-08-28 氮化銦鎵/氮化鎵藍光發光二極體效率衰退現象之改善;Improving the efficiency droop of InGaN/GaN blue light-emitting diodes 劉學興; Liu,Hsueh-hsing
    2001-07-18 氮化銦鎵/氮化鎵量子井之光特性研究; Studies of Optical Properties for InGaN/GaN Quantum Well Structures 謝昆龍; Kun-Long Xie
    2006-07-03 氮化銦鎵/氮化鎵量子井雷射二極體之研製與分析; The Fabrication and Analysis of InGaN/GaN MQWs Laser Diode 呂政學; Cheng-Hsueh Lu
    2002-06-07 氮化銦鎵?氮化鎵多層量子井發光二極體之電性研究; The electrical properties of InGaN/GaN MQWs LED 曾國偉; Kuo-Uei Tseng
    2018-07-26 氮化銦鎵半極性奈米量子井螢光光譜分析 陳士弘; CHEN, SHI-HONG
    2008-06-24 氮化銦鎵奈米碟在氮化鎵奈米柱上之光學性質研究; Optical properties of InGaN Nano Disk on GaN nanorods 楊名慧; Ming-Hui Yang
    2018-07-23 氮化銦鎵奈米量子井的表面增益拉曼散射分析;Study of Surface-Enhanced Raman Scattering on Nano-structured InGaN Quantum wells 王菘郁; Wang, Song-Yu
    2004-07-05 氮化銦鎵發光二極體之研製; Investigation of InGaN/GaN Light Emitting Diode 劉育全; Yu-Chuan Liu
    2004-07-05 氮化銦鎵系列多層量子井之光學特性探討; Optical characterization of InGaN-based Multiple Quantum Well Structures 丁肇敏; Chao-Min Ting
    2007-09-27 氮化銦鎵紫外光發光二極體之研製; Investigation of InGaN Ultraviolet Light-Emitting Diodes 潘昌吉; Chang-Chi Pan
    2009-06-24 氮化銦鎵綠光發光二極體之研製; Investigation of InGaN Green Light-Emitting Diodes 林宏誠; Hung-Cheng Lin
    2005-06-30 氮化銦鎵藍紫光發光二極體的載子傳輸行為之研究; Carrier Transport Behavior in InGaN-based UV-blue Two-Color LEDs 劉嘉紋; Chia-Wen Liu
    2020-07-24 氮化銦鎵表面增強拉曼散射的製程優化;Process optimization of InGaN-based surface-enhanced Raman scattering 胡道睿; Hu, Tao-Jui
    2002-06-20 氮化銦鎵量子井與藍紫光雷射二極體結構之成長與分析; Growth and Characterization of InGaN/GaN Quantum Well and Blue-violet Laser Diode Structures 卓昌正; Chang-Cheng Chuo
    顯示項目61801-61825 / 83955. (共3359頁)
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    每頁顯示[10|25|50]項目

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