DSpace community: 能源工程研究所

Wide-range work-function tuning of active graphene transparent electrodes via hole doping

title: Wide-range work-function tuning of active graphene transparent electrodes via hole doping abstract: 摘要： Graphene is regarded as a potential candidate to replace the transparent conductive (TC) electrodes that are currently used in various optoelectronic applications. However, there is still a lack of methods by which to achieve low sheet resistance ( R s ) with stable doping and work functions with a wide range of tunability, which is significant for band alignment at the interface to enhance charge transport and thus to achieve higher device performance. We developed a novel strategy for preparing a TC electrode by doping layer-by-layer (LBL)-stacked graphene with AuCl 3 , by which means an excellent TC performance (an R s of 40 ohm sq −1 at a transmittance ( T ) of 89.5%) and an extremely wide range of work-function tunability (∼1.5 eV) were successfully achieved. Moreover, a hybrid electrode prepared by transferring doped graphene onto a pre-patterned Cu metal mesh exhibited a low resistance of ∼4.9 ohm sq −1 . In addition, we monitored the long-term stability of AuCl 3 -doped graphene for 6 months and also constructed a model for accelerated degradation testing. The relevant mechanism of charge transfer between the graphene and the dopants was characterized based on X-ray photoelectron spectroscopy (XPS) spectra to elucidate degradation observed after long-term testing. This work contributes a novel type of “active electrode”; the doped graphene film not only serves as a high-performance TC electrode but also provides a wide range of tunable work functions. The proposed active electrode is prepared using a scalable and facile doping process, which paves the way for its usage in applications such as optoelectronic devices. 出版日期： 2016-01-01 出處： RSC advances, 2016-01, Vol.6 (39), p.32746-32756 資源來源： Royal Society of Chemistry 識別號： ISSN: 2046-2069 識別號： EISSN: 2046-2069 識別號： DOI: 10.1039/C6RA04449B

Wide-angle antireflection ZnO films on bullet-like nanostructures of multi-crystalline silicon

title: Wide-angle antireflection ZnO films on bullet-like nanostructures of multi-crystalline silicon abstract: 摘要： Nanosphere lithography and antireflection coating techniques have been applied to fabricate wide-angle antireflection structures on multicrystalline silicon substrates. Self-assembled 550-nm SiO2 nanospheres were arranged periodically to act as a mask to block the inductively coupled plasma dry etching and form bulletlike nanostructures on the surface of the multicrystalline silicon wafer. Then a 65-nm-thick zinc oxide film was deposited on the nanostructures using the atomic layer deposition method. The results show that when applying the nanostructure with a ZnO film the average reflectivity of the multicrystalline silicon wafer can be decreased from 36% to 0.65% in the wavelength range from 400 nm to 850 nm for an incident angle of 8°. When the incident angle reaches 60° the average reflectivity of the sample becomes less than 4.6%. 出版者： United States: American Vacuum Society 出版日期： 2012-01-01 出處： Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, 2012-01, Vol.30 (1), p.01A141-01A141-5 資源來源： AIP Journals (American Institute of Physics) 版權： American Vacuum Society 版權： 2012 American Vacuum Society 識別號： ISSN: 0734-2101 識別號： ISSN: 1553-1813 識別號： EISSN: 1520-8559 識別號： DOI: 10.1116/1.3666040 識別號： CODEN: JVTAD6

Use of biotinylated chitosan for substrate-mediated gene delivery

title: Use of biotinylated chitosan for substrate-mediated gene delivery abstract: 摘要： To improve transfection efficiency of nonviral vectors, biotinylated chitosan was applied to complex with DNA in different N/P ratios. The morphologies and the sizes of formed nanoparticles were suitable for cell uptake. The biotinylation decreased the surface charges of nanoparticles and hence reduced the cytotoxicity. The loading capacities of chitosan were slightly decreased with the increase of biotinylation, but most of the DNA molecules were still complexed. Using different avidin-coated surfaces, the interaction between biotinylated nanoparticles to the substrate may be manipulated. The in vitro transfection results demonstrated that biotinylated nanoparticles may be bound to avidin coated surfaces, and the transfection efficiencies were thus increased. Through regulating the N/P ratio, biotinylation levels, and surface avidin, the gene delivery can be optimized. Compared to the nonmodified chitosan, biotinylated nanoparticles on biomaterial surfaces can increase their chances to contact adhered cells. This spatially controlled gene delivery improved the gene transfer efficiency of nonviral vectors and could be broadly applied to different biomaterial scaffolds for tissue engineering applications. 其他題名： Bioconjugate Chem 出版者： United States: American Chemical Society 出版日期： 2012-08-15 出處： Bioconjugate chemistry, 2012-08, Vol.23 (8), p.1587-1599 資源來源： American Chemical Society Journals 版權： Copyright © 2012 American Chemical Society 版權： Copyright American Chemical Society Aug 15, 2012 識別號： ISSN: 1043-1802 識別號： ISSN: 1520-4812 識別號： EISSN: 1520-4812 識別號： DOI: 10.1021/bc300121y 識別號： PMID: 22768969

Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam

title: Ultra-low-edge-defect graphene nanoribbons patterned by neutral beam abstract: 摘要： Top-down process, comprising lithography and plasma etching is widely used in very-large-scale integration due to its scalability, has the greatest potential to fabricate graphene nanoribbon based nanoelectronic devices for large-scale intergraded circuits. However, conventional plasma etching inevitably introduces plenty of damage or defects to the etched materials, which drastically degrades the performance of nano materials. In this study, extremely low-damage neutral beam etching (NBE) is applied to fabricate ultra-low-defect graphene nanoribbon array (GNR). The ultra-low-edge-defect GNRs are fabricated by E-beam lithography followed by oxygen NBE from large-scale chemical-vapor-deposition-grown graphene. AFM images clearly shows the GNRs patterned by NBE and E-beam lithography, and Raman spectroscopy exhibits extremely low ID/IG of GNRs, which indicate that high-quality GNRs can be successfully fabricated by neutral beam. We also demonstrated bottom-gated field-effect transistor with the high-quality GNR and observed a high carrier mobility (>200cm2V−1s−1) at room temperature. 出版者： Kidlington: Elsevier Ltd 出版日期： 2013-09-01 出處： Carbon, 2013-09, Vol.61, p.229-235 資源來源： Elsevier ScienceDirect Journals Complete - Autoholdings 版權： 2013 Elsevier Ltd 版權： 2014 INIST-CNRS 識別號： ISSN: 0008-6223 識別號： EISSN: 1873-3891 識別號： DOI: 10.1016/j.carbon.2013.04.099 識別號： CODEN: CRBNAH