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Use of anodes with tunable work function for improving organic light-emitting diode performance

title: Use of anodes with tunable work function for improving organic light-emitting diode performance abstract: 摘要： •The Fermi level of AZO films was controlled by introducing different reactive gases during deposition process. The maximum tunable work function was 1.44eV.•The AZO anode stacked with high-work-function AZO films, similar to hole transport buffer layers, had a low turn-on voltage of 2.89V.•The luminance efficiency and power efficiency were 5.01% and 6.1% greater than those of tin-doped indium oxide anodes used in OLEDs. The effect of reactive gases—oxygen and hydrogen—on the tunable work function of Al-doped ZnO (AZO) films was studied. An increase in the work function with an increase in the oxygen flow rate was mainly interpreted as reflecting a decrease in the carrier concentration, which was attributed to the filling of oxygen vacancies. However, a decrease in the carrier concentration would result in the resistivity increasing sharply. This article presents a new concept for improving the performance of organic light-emitting diodes (OLEDs) through easy and effective hole injection from a multilayer AZO anode to the organic layer. A bilayer AZO film prepared using a tunable work function technique was used to modify the surface of AZO anodes and to ensure that the anodes had low resistivity. The AZO anode stacked with high-work-function AZO films, similar to hole transport buffer layers, had a low turn-on voltage of 2.89V, and its luminance efficiency and power efficiency were 5.01% and 6.1% greater than those of tin-doped indium oxide anodes used in OLEDs. 出版者： Elsevier B.V 出版日期： 2015-12-01 出處： Applied surface science, 2015-12, Vol.357, p.539-542 版權： 2015 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2015.09.036

Uniqueness of topological vortex in a self-dual maxwell-chern-simons-higgs system

title: Uniqueness of topological vortex in a self-dual maxwell-chern-simons-higgs system abstract: 摘要： A non-relativistic self-dual Maxwell-Chern-Simons-Higgs system is considered. We prove the uniqueness of the topological vortex solutions. 出版者： Department of Mathematics of Indiana University 出版日期： 2015-01-01 出處： Indiana University mathematics journal, 2015-01, Vol.64 (6), p.1747-1766 資源來源： Single Journals 版權： 2015 Department of Mathematics, Indiana University 識別號： ISSN: 0022-2518 識別號： EISSN: 1943-5258 識別號： DOI: 10.1512/iumj.2015.64.5691

Uniqueness of topological multivortex solutions in the Maxwell-Chern-Simons model

title: Uniqueness of topological multivortex solutions in the Maxwell-Chern-Simons model abstract: 摘要： In this paper, we prove the uniqueness of topological multivortex solutions for the self-dual Maxwell–Chern–Simons U(1) model if the Chern–Simons coupling parameter is sufficiently large and the charge of electron is sufficiently small or large. On the other hand, we also establish the sharp region of the flux for non-topological solutions and provide the classification of radial solutions of all types in the case of one vortex point. 出版者： Elsevier Inc 出版日期： 2016-03-15 出處： Journal of functional analysis, 2016-03, Vol.270 (6), p.2073-2125 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2016 Elsevier Inc. 識別號： ISSN: 0022-1236 識別號： EISSN: 1096-0783 識別號： DOI: 10.1016/j.jfa.2016.01.024

Transparent conductive distributed Bragg reflectors composed of high and low refractive index transparent conductive films

title: Transparent conductive distributed Bragg reflectors composed of high and low refractive index transparent conductive films abstract: 摘要： This article has shown that the co-sputtering method and post-annealing treatment have successfully fabricated the transparent conductive distributed Bragg reflectors (TCDBR). The transparent conducting film, anatase Nb-doped TiO 2 (TNO), which has a high refractive index can be combined with Al-doped ZnO (AZO) low refractive index transparent conducting films to make a TCDBR capable of transferring the current from electrode to semiconductor while still maintaining the advantage for the micro resonant cavity. The eight-period stack of AZO/TNO achieves a reflectivity of up to 90% centered at 550 nm and a resistivity of $1.88\times 10^{-3}$ $\Omega$ cm. 出版者： The Japan Society of Applied Physics 出版日期： 2012-05-01 出處： Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.052602-052602-4 資源來源： Institute of Physics Journals 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.1143/JJAP.51.052602