DSpace collection: 期刊論文

Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

title: Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors abstract: The carbon monoxide (CO) detection sensitivities of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors were measured over a range of temperatures from 25-150 degrees C. Once the sensor was exposed to the CO-containing ambient, the drain current, I, of the high electron mobility transistors increased due to chemisorbed oxygen on the ZnO surface reacting with CO, forming CO(2) and releasing electrons to the oxide surface. Although the sensor could detect CO as low as 100 ppm at room temperature, the detection sensitivity, Delta I/I, was only around 0.23%. By increasing the sensor temperature to 150 degrees C, the detection sensitivity was improved by a factor of over 30% to 7.5%. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647561]

The doping process of p-type GaN films

title: The doping process of p-type GaN films abstract: The formation of p-type GaN him is a key technology in developing optoelectronic devices. P-type doping (concentration similar to 10(17) cm(-3)) has been achieved in grown GaN by metalorganic chemical vapor deposition (MOCVD) with Mg (CP2Mg) doping. The H

Optical properties in InGaN/GaN multiple quantum wells and blue LEDs

title: Optical properties in InGaN/GaN multiple quantum wells and blue LEDs abstract: InGaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes were grown by metalorganic vapor phase epitaxy (MOVPE), Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emissio

Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy

title: Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy abstract: Using cross-section transmission electron microscopy and grazing incidence x-ray diffraction measurements, this work investigates the defect reduction in a wurtize GaN thin film with a multiple composite layer grown by atmospheric-pressure organometallic