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Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

title: Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells abstract: 摘要： The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018cm−3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells. •GaN p-n-n homojunction solar cells are designed and fabricated to demonstrate the capability of sub-bandgap photon absorption.•The n-type active region is doped with Si in order to create an intermediate band.•Under the illumination of AM 1.5G, the short-circuit current density is significantly enhanced by 90% with increased Si-doping in the active region.•The partially filled intermediate band is confirmed with a two-photon absorption measurement. 出版者： Elsevier B.V 出版日期： 2015-01 出處： Solar energy materials and solar cells, 2015-01, Vol.132, p.544-548 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2014 Elsevier B.V. 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2014.10.008

Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

title: Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells abstract: 摘要： The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018cm−3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells. •GaN p-n-n homojunction solar cells are designed and fabricated to demonstrate the capability of sub-bandgap photon absorption.•The n-type active region is doped with Si in order to create an intermediate band.•Under the illumination of AM 1.5G, the short-circuit current density is significantly enhanced by 90% with increased Si-doping in the active region.•The partially filled intermediate band is confirmed with a two-photon absorption measurement. 出版者： Elsevier B.V 出版日期： 2015-01 出處： Solar energy materials and solar cells, 2015-01, Vol.132, p.544-548 資源來源： ScienceDirect (Elsevier) Journals 版權： 2014 Elsevier B.V. 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2014.10.008

Wuho Is a New Member in Maintaining Genome Stability through its Interaction with Flap Endonuclease 1

title: Wuho Is a New Member in Maintaining Genome Stability through its Interaction with Flap Endonuclease 1 abstract: 摘要： Replication forks are vulnerable to wayward nuclease activities. We report here our discovery of a new member in guarding genome stability at replication forks. We previously isolated a Drosophila mutation, wuho (wh, no progeny), characterized by a severe fertility defect and affecting expression of a protein (WH) in a family of conserved proteins with multiple WD40 repeats. Knockdown of WH by siRNA in Drosophila, mouse, and human cultured cells results in DNA damage with strand breaks and apoptosis through ATM/Chk2/p53 signaling pathway. Mice with mWh knockout are early embryonic lethal and display DNA damage. We identify that the flap endonuclease 1 (FEN1) is one of the interacting proteins. Fluorescence microscopy showed the localization of WH at the site of nascent DNA synthesis along with other replication proteins, including FEN1 and PCNA. We show that WH is able to modulate FEN1's endonucleolytic activities depending on the substrate DNA structure. The stimulatory or inhibitory effects of WH on FEN1's flap versus gap endonuclease activities are consistent with the proposed WH's functions in protecting the integrity of replication fork. These results suggest that wh is a new member of the guardians of genome stability because it regulates FEN1's potential DNA cleavage threat near the site of replication. 其他題名： PLoS Biol 出版者： United States: Public Library of Science (PLoS) 出版日期： 2016-01-01 出處： PLoS Biology, 2016-01, Vol.14 (1), p.e1002349 資源來源： EBSCOhost OmniFile Full Text Select 版權： COPYRIGHT 2016 Public Library of Science 版權： 2016 Cheng et al 2016 Cheng et al 版權： 2016 Public Library of Science. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited: Cheng I-C, Chen BC, Shuai H-H, Chien F-C, Chen P, Hsieh T-s (2016) Wuho Is a New Member in Maintaining Genome Stability through its Interaction with Flap Endonuclease 1. PLoS Biol 14(1): e1002349. doi:10.1371/journal.pbio.1002349 識別號： ISSN: 1545-7885 識別號： ISSN: 1544-9173 識別號： EISSN: 1545-7885 識別號： DOI: 10.1371/journal.pbio.1002349 識別號： PMID: 26751069

Wide-angle antireflection ZnO films on bullet-like nanostructures of multi-crystalline silicon

title: Wide-angle antireflection ZnO films on bullet-like nanostructures of multi-crystalline silicon abstract: 摘要： Nanosphere lithography and antireflection coating techniques have been applied to fabricate wide-angle antireflection structures on multicrystalline silicon substrates. Self-assembled 550-nm SiO2 nanospheres were arranged periodically to act as a mask to block the inductively coupled plasma dry etching and form bulletlike nanostructures on the surface of the multicrystalline silicon wafer. Then a 65-nm-thick zinc oxide film was deposited on the nanostructures using the atomic layer deposition method. The results show that when applying the nanostructure with a ZnO film the average reflectivity of the multicrystalline silicon wafer can be decreased from 36% to 0.65% in the wavelength range from 400 nm to 850 nm for an incident angle of 8°. When the incident angle reaches 60° the average reflectivity of the sample becomes less than 4.6%. 出版者： United States: American Vacuum Society 出版日期： 2012-01-01 出處： Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, 2012-01, Vol.30 (1), p.01A141-01A141-5 資源來源： AIP Journals (American Institute of Physics) 版權： American Vacuum Society 版權： 2012 American Vacuum Society 識別號： ISSN: 0734-2101 識別號： ISSN: 1553-1813 識別號： EISSN: 1520-8559 識別號： DOI: 10.1116/1.3666040 識別號： CODEN: JVTAD6