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  <item rdf:about="https://ir.lib.ncu.edu.tw/handle/987654321/32735">
    <title>Wide-stopband microstrip bandpass filters using dissimilar quarter-wavelength stepped-impedance resonators</title>
    <link>https://ir.lib.ncu.edu.tw/handle/987654321/32735</link>
    <description>title: Wide-stopband microstrip bandpass filters using dissimilar quarter-wavelength stepped-impedance resonators abstract: Wide-stopband and compact microstrip bandpass filters (BPFs) are proposed using various dissimilar quarter-wavelength (lambda/4) stepped-impedance resonators (SIRs) for multiple spurious suppression. The use of lambda/4 SIRs is essential in widening the f
&lt;br&gt;</description>
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  <item rdf:about="https://ir.lib.ncu.edu.tw/handle/987654321/32734">
    <title>Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures</title>
    <link>https://ir.lib.ncu.edu.tw/handle/987654321/32734</link>
    <description>title: Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures abstract: In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional
&lt;br&gt;</description>
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    <title>Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes</title>
    <link>https://ir.lib.ncu.edu.tw/handle/987654321/32733</link>
    <description>title: Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes abstract: The thermal stability, optical reflectivity, and contact resistivity of Pd/NiO/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to Pd/Ni/Al/Ti/Au counterparts, the ohmic contacts Pd/NiO/Al/Ti/Au retained their specific contact resistiv
&lt;br&gt;</description>
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  <item rdf:about="https://ir.lib.ncu.edu.tw/handle/987654321/32732">
    <title>The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure</title>
    <link>https://ir.lib.ncu.edu.tw/handle/987654321/32732</link>
    <description>title: The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure abstract: GaN with pairs of AlGaN/GaN superlattices (SLs) structure for p-i-n UV photo detector are fabricated on sapphire by metal organic chemical vapor deposition (MOCVD). For 8-pair AlGaN/GaN SLs not only eliminates cracking through this strain management, but
&lt;br&gt;</description>
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