交流白光非晶碳氫與氮化矽氫薄膜發光二極體之研製; Design and Fabrication of a-C:H and a-SiN:H Alternating-Current White Thin-film Light-Emitting Diodes

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10016

Title:	交流白光非晶碳氫與氮化矽氫薄膜發光二極體之研製;Design and Fabrication of a-C:H and a-SiN:H Alternating-Current White Thin-film Light-Emitting Diodes
Authors:	余泰榮;Tai-Rong Yu
Contributors:	電機工程研究所
Keywords:	氮化矽氫;交流;薄膜發光二極體;白光;非晶碳氫;white light;alternating-current;TFLED;amorphous SiN;amorphous carbon
Date:	2006-06-27
Issue Date:	2009-09-22 12:03:36 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本研究的主要目的是研製交流白光非晶質薄膜發光二極體。在現階段，我們成功地運用一層很薄的本質非晶碳氫或氮化矽氫做為發光層，且利用PECVD系統在位氫電漿處理發光層薄膜，提高薄膜中的氫含量以及修補懸鍵，進而改善元件發光效率。實驗結果顯示，適當的氫電漿處理確實能有效改善元件特性，大幅提升元件發光效率。同時我們也對元件電性做一系列量測，包括發光亮度、發光頻譜以及交流頻率響應等。量測結果顯示，不同大小的電壓幾乎不會改變發光波段，但是隨著交流頻率的增加卻會導致發光頻譜出現紅移的現象。 The alternating-current (AC) white amorphous thin-film light-emitting diodes have been designed and fabricated in this study. We had successfully used the very thin i-a-C:H (device 1) and i-a-SiN:H (device 2) films as the luminescent layer individually and applied in-situ hydrogen plasma treatment on film to increase its hydrogen concentration, passivate the dangling bonds in the film and hence improve device optoelectronic characteristics. From the experiment results, it was evident a proper hydrogen plasma treatment process could be used to improve the device performance. In addition, a series of measurements including brightness, electroluminescence (EL) spectrum, and frequency response had been taken to investigate the device characteristics. The results showed that the peak wavelength of device EL spectrum was almost independent of the applied-voltage. However, the EL spectrum would be red-shifted with the increasing AC frequency.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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