砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計; Microwave/Millimeter-wave Amplifier Design using GaAs Enhancement/Depletion Mode Dual-Gate pHEMT

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10154

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/10154

Title:	砷化鎵增強/空乏型雙閘極高電子遷移率電晶體於微波/毫米波放大器設計;Microwave/Millimeter-wave Amplifier Design using GaAs Enhancement/Depletion Mode Dual-Gate pHEMT
Authors:	蔡友益;Yu-Yi Tsai
Contributors:	電機工程研究所
Keywords:	增強/空乏型;高電子遷移率電晶體;放大器;雙閘極;砷化鎵;amplifier;pHEMT;dual-gate;e/d mode
Date:	2007-06-14
Issue Date:	2009-09-22 12:07:52 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	隨著無線通訊的快速發展，相關的微波元件以及微波電路日趨重要。本論文主要討論雙閘極E/D-Mode pHEMT應用在射頻電路放大器的應用，由於雙閘極E/D-Mode pHEMT具有高fmax的特性以及製程上成本的優勢，目標是希望利用0.5 μm 雙閘極E/D-Mode pHEMT 實現0.15 μm pHEMT製程所製作的電路特性。第一章為整篇論文的導論，第二章分析雙閘極E/E 和E/D-Mode pHEMT元件的直流、高頻和功率等特性，以及利用實際的電路驗證雙閘極E/E 和E/D-Mode pHEMT元件應用在實際電路上的可行性；元件量測上，利用HP IC-CAP軟體，配合HP-4142B直流分析儀與HP-8510C網路分析儀量測元件的直流、高頻特性，此外，也利用實驗室的Maury load pull 系統，量測元件的功率特性；第三章討論利用雙閘極E/E 和E/D-Mode pHEMT元件所設計的Ka-band 微波增益放大器，驗證雙閘極E/E 和E/D-Mode pHEMT元件在高頻電路上的可行性，第四章則是利用Lange耦合器搭配兩個獨立的微波增益放大器實現平衡式Ku /K-band的微波增益放大器；第五章則是延續雙閘極的架構，利用0.15 μm pHEMT疊接的架構設計一個V-band 寬頻低雜訊放大器；第六章歸納本論結果，並做一個結論。 The technology of the microwave is developed fast, the devices and the circuits about microwave is so important. We have studied the microwave/ millimeter-wave Amplifier Design using GaAs enhancement/depletion mode dual-gate pHEMT in the thesis. Because of the dual-gate E/D-Mode pHEMT owning the advantage of high fmax and low cost, we hope to design amplifier applied at high frequency using 0.5 μm dual-gate E/D-Mode pHEMT. In chapter two, we have analyzed the performance of the 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In the chapter three and four, we have designed the amplifier applied at high frequency using 0.5 μm dual-gate E/E and E/D-Mode pHEMT. In chapter five, we have designed the V-band low noise amplifier using0.15 μm pHEMT according to dual-gate topology. In the final chapter, we summarized the results in this thesis.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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