半導體量子點之穿隧電流; Tunneling current through a single semiconductor quantum dot

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Title:	半導體量子點之穿隧電流;Tunneling current through a single semiconductor quantum dot
Authors:	沈家賢;Jia-sian Shen
Contributors:	電機工程研究所
Keywords:	量子點;格林函數;單電子電晶體;quantum dots;single-electron transistors;Green's function
Date:	2008-06-19
Issue Date:	2009-09-22 12:08:10 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文是理論探討流經半導體量子點的穿隧電流，我們使用了兩個能階的安德森模型，來模擬這個系統。穿隧電流分別顯示出庫倫階梯與庫倫振盪的關係，相對於源極-汲極電壓與閘極電壓。穿隧電流頻譜的結構很容易被溫度所抑制。對四重簡併態，穿隧電流不會呈現雙穩態電流的現象。 Is this thesis we theoretically study the tunneling current through a semiconductor quantum dot . The Anderson model with two energy levels is used to simulate our studied system . Tunneling current show , respectively , the staircase and oscillatory behaviers with respect to the sourse-drain voltage and the gate voltage . The structure of current spectrum is easily suppressed by temperature . For the four-fold degenerate state , tunneling current did not exhibit bistable current .
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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