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| 題名: | Dendrons with urea/malonamide linkages for gate insulators of n-channel organic thin film transistors |
| 作者: | 陳錦地;Hsu, Yu-Yi;Yeh, Shih-Chieh;Lin, Shih-Hsun;Chen, Chin-Ti;Tung, Shih-Huang;Jeng, Ru-Jong |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | Atomic force microscopy;Atomic properties;Dendron;Diimide;Electric potential;Electrodes;Electron microscopes;Electron mobility;Fluorination;Gate insulator;GIWAXS;Grazing incidence;Inspection;Insulation;Insulators;Ion/Ioff ratio;Linkages;Naphthalene;Nondestructive testing;Semiconductor devices;Semiconductors;Silicon dioxide;Silicon substrates;Substrates;Thin film transistors;Thin films;X-ray scattering |
| 日期: | 2016-11-01 |
| 上傳時間: | 2026-04-21 14:50:45 (UTC+8) |
| 出版者: | Elsevier;Amsterdam: Elsevier B.V |
| 摘要: | 摘要： A series of urea/malonamide dendritic molecules were prepared as gate insulators for organic thin film transistors (OTFTs). This series of molecules with different degrees of branching possess peripheral stearyl groups are dendrons generation 0.5 (G0.5), generation 1 (G1), generation 1.5 (G1.5), generation 2 (G2) and generation 2.5 (G2.5). In addition, two types of tetracarboxylic diimide derivatives, i.e. perylene diimide (PDI) and naphthalene diimide (NDI) with two different chain lengths of fluorinated alkyl end groups were prepared as semiconductors for OTFTs such as NDI-C4F7, NDI-C7F9, PDI-C4F7 and PDI-C7F9. The n-channel types of OTFTs were fabricated by spin-coating the gate insulators on Si/SiO2 substrates, and then depositing the semiconducting layers in vacuum without heating the substrate. Silver was used as contact electrodes for source and drain. The performance of OTFTs with dendrons as gate insulators were better than that of OTFTs modified by octadecyltrichlorosilane (ODTS). Moreover, the threshold voltages (Vths) of OTFTs shifted from positive voltage to negative voltage as the device was incorporated with higher generation of dendrons. This is because of different dielectric constants or surface energies between the interface of gate insulator and semiconducting layer. Among all samples in this study, the n-channel OTFT comprising PDI-C4F7 and G1.5 exhibited the best performance. In addition, an enhanced electron mobility and Ion/Ioff ratio measured under ambient condition were 4.71×10−4cm2V−1s−1 and 7.7×103, respectively. Apart from that, the influence of semiconducting molecular packing order on dendron gate insulator layers was investigated by grazing-incidence wide-angle X-ray scattering (GIWAXS) and atomic force microscopy (AFM). Furthermore, pentacene-based p-channel OTFTs with G1.5 gate insulator also exhibited the highest performance. These OTFTs achieved 0.1cm2V−1s−1 and 6.3×104 for mobility (μ) and Ion/Ioff ratio, respectively.
出版者： Amsterdam: Elsevier B.V
出版日期： 2016-11-01
出處： Reactive & functional polymers, 2016-11, Vol.108, p.86-93
版權： 2016 Elsevier B.V.
版權： Copyright Elsevier BV Nov 2016
識別號： ISSN: 1381-5148
識別號： EISSN: 1873-166X
識別號： DOI: 10.1016/j.reactfunctpolym.2016.05.008 |
| 顯示於類別: | [化學學系] 期刊論文
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