摘要： An in situ electromigration study has been conducted on U-groove Cu/Sn-3.5Ag/Cu and Ni/Sn-3.5Ag/Ni sandwich structures; the results were used to simulate microsolder joints passing current density of 1 × 10 4 A/cm 2 at 150°C. The solder gap was only 15 μ m, shorter than the critical length of Sn-3.5Ag solder. Backstress was proved to exist at critical solder lengths and to influence the electromigration mechanism. Theoretical calculations of the diffusivity of Cu and Ni in Sn solder indicated that the degree to which the dominant diffusion species (Cu or Ni atoms) diffused through the solder line is retarded by the backstress effect. The morphologies of intermetallic compounds (IMCs) were observed, and the grain boundaries in Sn solder were measured using electron backscatter diffraction to determine the kinetics of intermetallic growth. The results reveal that the unique electromigration characteristics of microbump joints, including the diffusivity, morphology, and backstress, can be determined. The retardation of atomic migration improves the reliability against electromigration. 其他題名： Journal of Elec Materi 出版者： New York: Springer US 出版日期： 2016-12-01 出處： Journal of electronic materials, 2016-12, Vol.45 (12), p.6163-6170 資源來源： EBSCOhost OmniFile Full Text Select 版權： The Minerals, Metals & Materials Society 2016 版權： Journal of Electronic Materials is a copyright of Springer, 2016. 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-016-4874-x 識別號： CODEN: JECMA5
