摘要： In this study, light emitting diode (LED) chips were die-bonded on a Ag/Cu substrate by a Sn-BixZn-Sn bonding system. A high die-bonding strength is successfully achieved by using a Sn-BixZn-Sn ternary system. At the bonding interface, there is observed a Bi-segregation phenomenon. This Bi-segregation phenomenon solves the problems of the brittle layer-type Bi at the joint interface. Our shear test results show that the bonding interface with Bi-segregation enhances the shear strength of the LED die-bonding joints. The Bi-0.3Zn and Bi-0.5Zn die-bonding cases have the best shear strength among all die-bonding systems. In addition, we investigate the atomic depth profile of the deposited Bi-xZn layer by evaporating Bi-xZn E-gun alloy sources. The initial Zn content of the deposited Bi-Zn alloy layers are much higher than the average Zn content in the deposited Bi-Zn layers. 其他題名： Journal of Elec Materi 出版者： New York: Springer US 出版日期： 2016-12-01 出處： Journal of electronic materials, 2016-12, Vol.45 (12), p.6171-6176 資源來源： EBSCOhost OmniFile Full Text Select 版權： The Minerals, Metals & Materials Society 2016 版權： Journal of Electronic Materials is a copyright of Springer, 2016. 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-016-4885-7 識別號： CODEN: JECMA5
