Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films

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題名:	Comparative and integrative study of Langmuir probe and optical emission spectroscopy in a variable magnetic field electron cyclotron resonance chemical vapor deposition process used for depositing hydrogenated amorphous silicon thin films
作者:	李建階;Hu, L.C.;Ruan, G.M.;Wei, T.C.;Wang, C.J.;Lin, Y.W.;Lee, C.C.;Kawai, Y.;Li, Tomi T.
貢獻者:	光電科學研究中心
關鍵詞:	Amorphous silicon;Chemical vapor deposition;Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.);Cross-disciplinary physics: materials science;rheology;Electron cyclotron resonance;Electron cyclotron resonance chemical vapor deposition;Electron temperature;Exact sciences and technology;Hydrogenated amorphous silicon;In-situ plasma diagnostics;Langmuir probe;Langmuir-Blodgett films;Magnetic fields;Magnetic resonance;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Optical emission spectroscopy;Partial pressure;Physics;Physics of gases, plasmas and electric discharges;Physics of plasmas and electric discharges;Plasma diagnostic techniques and instrumentation;Theory and models of film growth;Thin films;Variable magnetic field;Volatility
日期:	2014-01-01
上傳時間:	2026-04-23 11:21:04 (UTC+8)
出版者:	Elsevier;Amsterdam: Elsevier B.V
摘要:	摘要： An electron cyclotron resonance chemical vapor deposition (ECR-CVD) system applied in a hydrogenated amorphous silicon (a-Si:H) thin-film deposition process was diagnosed in-situ by using optical emission spectroscopy (OES) and a Langmuir probe. The optical actinometry technique was used to obtain the ratio of species concentration to the concentration of a trace gas (Ar). The electron temperature (Teoes) was estimated according to the spectrum intensity ratio of Hβ to Hα or that of Si* to SiH, and the two estimation approaches were evaluated by comparing the results (TeLP) of Langmuir probe measurement. The probe surface contaminants (a-Si:H) produced during in-situ measurement created errors in the measurement of parameters such as the electron temperature and density (Ne). The results indicated that, when a-Si:H was coated on the probe at thicknesses less than 150nm, the errors were negligible. OES and Langmuir probe measurement were integrated and used to determine the dependence of the processing pressure and resonance magnetic field configuration on the properties of an a-Si:H film grown using ECR-CVD. When the process pressure was increased, the Ne, Teoes and TeLP decreased; moreover, the Fourier-transform infrared spectroscopy results indicated that structure factor (R) increased, and both the photosensitivity and hydrogen content (CH) decreased. An analysis conducted using OES and Langmuir probe measurement revealed, that the decreased concentration of the H radical reduced the passivation effect, and surface diffusion decreased. Furthermore, the gas partial pressure exerted a substantial influence on OES measurement. The volatility of the Ar spectrum intensity equaled the product of the volatility of Ne and TeLP when the partial pressure effect is eliminated. Regarding the resonance magnetic field, the effects of plasma resonance position on film characteristics were substantial. The Ne decreased greatly when the distance between quartz and the resonance zone was increased. •We diagnose variable magnetic field electron cyclotron resonance H2-Ar-SiH4 plasma.•We examine changes in magnetic field about amorphous silicon film quality.•The intensity ratio of Hβ/Hα is a more accurate index for plasma diagnostics.•We examine the effect of tip surface contamination about Langmuir probe measurement. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-11-01 出處： Thin Solid Films, 2014-11, Vol.570, p.574-579 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2014.05.063 識別號： CODEN: THSFAP
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