摘要： In this study, we use an electron cyclotron resonance chemical vapor deposition to deposit hydrogenated amorphous Silicon (a-Si:H) by different process parameters. We investigated the structure and passivation quality of a-Si:H by tuning the hydrogen dilution ratio and thermal annealing. The properties of films were measured by spectroscopic ellipsometry, optical emission spectroscopy, Fourier transform infrared spectrometer, and quasi-steady-state photoconductance methods. The best passivation quality results from films are consistent with a low microstructure parameter, abundant hydrogen content, and high photosensitivity. The maximum value of τeff at about 1182μs at an injection level of 10−15cm−3 was obtained on single-side polished p-type Cz (100) substrates after thermal annealing around 270°C. The high passivation quality can be obtained at the onset of the amorphous–crystalline transition, while the thin film remains in the amorphous phase. •Amorphous silicon film grown by hydrogen dilution is investigated for passivation.•Lower microstructure factor demonstrates better passivation performance.•Post thermal annealing is an effective method to improve the effective lifetime.•Carrier lifetime is larger than 1ms at onset of amorphous–crystalline transition. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-11-03 出處： Thin solid films, 2014-11, Vol.570, p.591-594 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2014.03.064 識別號： CODEN: THSFAP
