Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm 2 . The Q-factor of the cavity is measured to be as high as 10 4 . 其他題名： JPHOT 出版者： IEEE 出版日期： 2013-10-01 出處： IEEE photonics journal, 2013-10, Vol.5 (5), p.2202606-2202606 資源來源： IEEE Xplore (NTUSG) 識別號： ISSN: 1943-0655 識別號： ISSN: 1943-0647 識別號： EISSN: 1943-0647 識別號： DOI: 10.1109/JPHOT.2013.2280343 識別號： CODEN: PJHOC3
