摘要： •The Fermi level of AZO films was controlled by introducing different reactive gases during deposition process. The maximum tunable work function was 1.44eV.•The AZO anode stacked with high-work-function AZO films, similar to hole transport buffer layers, had a low turn-on voltage of 2.89V.•The luminance efficiency and power efficiency were 5.01% and 6.1% greater than those of tin-doped indium oxide anodes used in OLEDs. The effect of reactive gases—oxygen and hydrogen—on the tunable work function of Al-doped ZnO (AZO) films was studied. An increase in the work function with an increase in the oxygen flow rate was mainly interpreted as reflecting a decrease in the carrier concentration, which was attributed to the filling of oxygen vacancies. However, a decrease in the carrier concentration would result in the resistivity increasing sharply. This article presents a new concept for improving the performance of organic light-emitting diodes (OLEDs) through easy and effective hole injection from a multilayer AZO anode to the organic layer. A bilayer AZO film prepared using a tunable work function technique was used to modify the surface of AZO anodes and to ensure that the anodes had low resistivity. The AZO anode stacked with high-work-function AZO films, similar to hole transport buffer layers, had a low turn-on voltage of 2.89V, and its luminance efficiency and power efficiency were 5.01% and 6.1% greater than those of tin-doped indium oxide anodes used in OLEDs. 出版者： Elsevier B.V 出版日期： 2015-12-01 出處： Applied surface science, 2015-12, Vol.357, p.539-542 版權： 2015 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2015.09.036
